Two-Dimensional Pnictogen for Field-Effect Transistors

Abstract

<jats:p>Two-dimensional (2D) layered materials hold great promise for various future electronic and optoelectronic devices that traditional semiconductors cannot afford. 2D pnictogen, group-VA atomic sheet (including phosphorene, arsenene, antimonene, and bismuthene) is believed to be a competitive candidate for next-generation logic devices. This is due to their intriguing physical and chemical properties, such as tunable midrange bandgap and controllable stability. Since the first black phosphorus field-effect transistor (FET) demo in 2014, there has been abundant exciting research advancement on the fundamental properties, preparation methods, and related electronic applications of 2D pnictogen. Herein, we review the recent progress in both material and device aspects of 2D pnictogen FETs. This includes a brief survey on the crystal structure, electronic properties and synthesis, or growth experiments. With more device orientation, this review emphasizes experimental fabrication, performance enhancing approaches, and configuration engineering of 2D pnictogen FETs. At the end, this review outlines current challenges and prospects for 2D pnictogen FETs as a potential platform for novel nanoelectronics.</jats:p>

Emerging Mono‐Elemental Bismuth Nanostructures: Controlled Synthesis and Their Versatile Applications

“…In recent years, 2D pnictogen, group‐VA atomic sheet (phosphorene, arsenene, antimonene, and bismuthene) have achieved remarkable progress and is considered to be a competitive candidate for next‐generation logic devices due to their fascinating physicochemical properties, such as tunable bandgap and controllable stability except arsenene because of its high toxicity. [ 1–3 ] Until now, many comprehensive and impressive reviews have been published on topics related to phosphorene, [ 4–9 ] and antimonene. [ 10 ] For example, Zhang and co‐workers [ 5 ] systematically summarized the recent developments in black phosphorus (BP), including the synthetic approaches for fabricating single or few‐layer BP, the recent advances in its optical, electronic, and mechanical properties, and the related devices.…”

Anisotropic In‐Plane Ballistic Transport in Monolayer Black Arsenic‐Phosphorus FETs

“…In the Post‐Moore era, 2D semiconductor materials have received extensive attention 2–5. Taking the advantages of natural passivation and gate electrostatics, 2D electronic devices have gained prominence in recent years for next‐generation integrated electronics and optoelectronics applications,6,7 for example, graphene,8 transition metal dichalcogenides (TMDs),9–11 InSe,12–14 pnictogen,15–20 and Bi 2 O 2 Se 21–23…”

Design, characterization, and application of elemental 2D materials for electrochemical energy storage, sensing, and catalysis

“…Arsenene is comprised of a monolayer of arsenic and has a buckled hexagonal structure akin to elemental 2D materials from group IVA. 62,96 If the bulk material is orthorhombic As, then the corresponding monolayer (a-As) is similar to phosphorene and exhibits a hexagonal structure. 97 On the other hand, if the gray As is the initial material, then the monolayer exhibits a buckled structure and is termed b-As.…”

“…99 In addition, arsenene has a semiconducting band structure with an indirect bandgap value of 2.49 eV and high carrier mobility. 96,100 Mechanical strain, such as strain-induced band transition, modulates the electronic properties in this elemental monolayer species. According to Kong et al, 12% biaxial tensile strain on doped arsenene (at a temperature of 30.8 K) makes arsenene superconducting.…”