Anisotropic In‐Plane Ballistic Transport in Monolayer Black Arsenic‐Phosphorus FETs

Zhou, Wenhan; Zhang, Shengli; Wang, Yangyang; Guo, Shiying; Qu, Hengze; Bai, Pengxiang; Li, Zhi; Zeng, Haibo

doi:10.1002/aelm.201901281

Cited by 70 publications

(69 citation statements)

References 36 publications

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“…This crystal also has a puckered structure with irregular hexagonal structure. From the top view, the two nearest phosphorus or arsenic atoms along the armchair direction show a crystal constant of 4.60Å, while the two nearest phosphorus or arsenic atoms along the zigzag direction show a crystal constant of 3.51Å (Figure 1(bii)) [21]. In addition to theoretical calculations, experimental data are more credible.…”

Section: Crystal Structurementioning

confidence: 88%

“…From the high resolution TEM image of the b-AsP flake, the orthorhombic crystal structure is shown and the crystal constant along different directions can be measured. The crystal constant along armchair a-i) is reproduced with permission from [30], (a-ii) from [8], (b-i) from [21], (b-ii) from [12], and (b-iii) from [31].…”

Section: Crystal Structurementioning

confidence: 99%

“…In this forward-looking review, we adopt a strategy to compare b-P and b-AsP from the basic properties to applications in the photo detection field, aiming to provide some promising directions for the future research on b-AsP. We (b-ii) is reproduced with permission from [21].…”

Section: Introductionmentioning

confidence: 99%

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Properties and photodetector applications of two-dimensional black arsenic phosphorus and black phosphorus

Han

Feng

Sun

et al. 2021

Sci. China Inf. Sci.

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black arsenic phosphorus (b-AsP), as an alloy of black phosphorus (b-P) with arsenic, has attracted great attention because of its outstanding electronic and optical properties, including high carrier mobility, tunable bandgap and in-plane anisotropy. B-AsP has a smaller bandgap (0.15-0.3 eV) than the b-P bandgap (0.3-2.0 eV), and thus can be used for mid-infrared photodetectors. In addition, both of them can form various van der Waals (vdW) heterojunctions with other 2D materials to realize novel functional optoelectronic devices. Here, we compare the basic characteristics of b-AsP and b-P, including crystal structure, optical properties, band structure, electrical properties and stability, and we summarize the update progress of b-AsP in photo detection, including representatives of phototransistor and photodiode devices. In the last part, the future research directions are discussed.

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Section: Crystal Structurementioning

confidence: 88%

Section: Crystal Structurementioning

confidence: 99%

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Properties and photodetector applications of two-dimensional black arsenic phosphorus and black phosphorus

Han

Feng

Sun

et al. 2021

Sci. China Inf. Sci.

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“…A series of 2D materials with puckered atomic structure (α phase) like BP, which can be seen as the isoelectronic species of BP, are designed in theory and have attached plenty of research interest. [ 28–35 ] These 2D puckered materials possess negative Poisson's ratio, tunable band gap, anisotropic properties, and high carrier mobility. [ 36 ] The on‐off ratio of 2D α‐AsP transistors fabricated in experiment reaches 1.9 × 10 3 .…”

Section: Introductionmentioning

confidence: 99%

“…[ 37 ] Quantum transport simulations predicted that the sub‐5‐nm 2D α‐AsP device performance can satisfy the HP requirements of ITRS. [ 32 ] Qu et al. investigated the relationship between the anisotropic electronic structure and quantum transport properties of 2D BP and group VA‐VA monolayers with puckered structure in 5 nm FETs.…”

Section: Introductionmentioning

confidence: 99%

Quantum Transport in Monolayer α‐CS Field‐Effect Transistors

Guo

Zhou

et al. 2021

Adv Elect Materials

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2D puckered materials similar to black phosphorene (BP) have tunable electronic structures, high mobility, and anisotropy, and are expected to become possible candidate channels for post‐silicon field‐effect transistors (FETs). Herein, monolayer α‐CS with puckered structure is evaluated as a promising channel material for sub‐5 nm FETs by using first principle quantum transport simulation. Monolayer α‐CS FETs can satisfy the requirements of the International Technology Roadmap for Semiconductors (ITRS) for high‐performance (HP) and low‐power (LP) applications. The on‐state current can reach 3700 µA µm−1 for HP FET at 5 nm channel length and the on‐off ratio of LP FET is exceeding 107, both superior to those of other 2D channels like BP and InSe. The results suggest that α‐CS as a competitive channel material opens a new avenue for the future electronic technology in the upcoming Internet of Things.

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Reconfigurable and Broadband Polarimetric Photodetector

Zhang

Zhu

et al. 2023

Adv Funct Materials

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The sensitive detection of light polarization besides the intensity and wavelength, can provide a new degree of freedom for more and clearer information of imaging targets in night, fog, and smoke environment. However, the conventional filter-integrated polarimetric photodetectors suffer from the complicated fabrication process and limited spectral range. Herein, broadband and polarization-sensitive photodetectors are achieved with reconfigurable operation mode, utilizing the linear dichroism and narrow band gap of 2D As 0.4 P 0.6 with in-plane anisotropic structure. In As 0.4 P 0.6 -MoTe 2 heterojunction device, both photo-gating and photovoltaic modes are operated and switchable, contributing to high responsivity (1590 A W −1 at 405 nm and 14.7 A W −1 at 1550 nm) and ultrafast speed (25 µs) in the wide spectral band (405-1550 nm). Interestingly, an optical reversal is observed on both linear dichroism and polarimetric photocurrent due to the wavelengthdependent polarization reverse nature of the As 0.4 P 0.6 flakes. The dichroism ratio of photocurrent can be modulated from unity to ≈10 by varying the gate voltage, enabling the reconfigurable detection mode from polarizationindependence to polarization-susceptibility. This study demonstrates a new prototype device comprising low symmetric van der Waals heterostructure, possessing the gate-tunability on both photo-gain and dichroism ratio, toward high performance, reconfigurable, broadband, and polarizationresolved photodetection and imaging applications.

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Anisotropic In‐Plane Ballistic Transport in Monolayer Black Arsenic‐Phosphorus FETs

Cited by 70 publications

References 36 publications

Properties and photodetector applications of two-dimensional black arsenic phosphorus and black phosphorus

Properties and photodetector applications of two-dimensional black arsenic phosphorus and black phosphorus

Quantum Transport in Monolayer α‐CS Field‐Effect Transistors

Reconfigurable and Broadband Polarimetric Photodetector

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