Two-Dimensional Photogalvanic Spin-Battery

Xie, Yuee; Chen, Mingyan; Wu, Zewen; Hu, Yibin; Wang, Yin; Wang, Jian; Guo, Hong

doi:10.1103/physrevapplied.10.034005

Cited by 73 publications

(40 citation statements)

References 59 publications

(79 reference statements)

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“…[ 16–18 ] More recently, Xie et al reported a PGE spin battery device based on 2D phosphorene not only generating pure spin current but also collecting photons, which provides a novel direction in the development of spintronic devices. [ 10 ]…”

Section: Figurementioning

confidence: 99%

“…[6] Recently, research has shown that light illumination is an effective way to produce current and modulate the valley current, charge, and spin in nanomaterials. [7][8][9][10][11][12] Furthermore, a detectable photocurrent can be generated by light irradiation with no need of external bias in the systems lacking space inversion symmetry, which is known as photogalvanic effect (PGE). [13] In recent years, the PGE has been extensively studied in low-dimension materials, such as monolayer silicene, [14] h-BN/Gr/h-BN vdW heterostructure, [15] S-doped monolayer black phosphorus, [9] and other nanoribbons.…”

mentioning

confidence: 99%

“…[16][17][18] More recently, Xie et al reported a PGE spin battery device based on 2D phosphorene not only generating pure spin current but also collecting photons, which provides a novel direction in the development of spintronic devices. [10] As a new class of 2D Dirac electronic material, silicene is considered as an excellent candidate for building spintronic devices [19][20][21][22] because of its compatibility with Si-based semiconductor industry and unique spin dependence. However, the zero bandgap and poor stability of silicene limit its further applications.…”

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confidence: 99%

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Photogalvanic‐Effect‐Induced Spin‐Polarized Current in Defective Silicane with H Vacancies

Yan

et al. 2020

Physica Rapid Research Ltrs

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The spin photocurrent of defective‐silicane‐based photoelectric devices is studied using non‐equilibrium Green's function with first‐principles density functional theory. The calculations reveal that the silicane with H vacancies is a ferromagnetic (FM) semiconductor with a 0.27 μB magnetic moment on the unhydrogenated Si atom. Due to the unique electronic structure, the directions and spin polarizations of the spin photocurrents can be effectively tuned by the polarization/phase angles or the photon energy (Eph) of the incident illumination. Especially, the 100% spin‐polarized photocurrents can be induced, as the Eph is 1.2–2.2 eV for both linearly polarized light (LPL) or circularly polarized light (CPL). Furthermore, the pure spin currents can be obtained by the CPL, as the Eph is 2.6 eV. These results indicate that defective silicane is a promising spintronic material.

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Section: Figurementioning

confidence: 99%

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confidence: 99%

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confidence: 99%

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Photogalvanic‐Effect‐Induced Spin‐Polarized Current in Defective Silicane with H Vacancies

Yan

et al. 2020

Physica Rapid Research Ltrs

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“…It should keep in mind that NEGF–SCF theory is not a ground state theory because it is determined by a nonvibrational and nonequilibrium density matrix. In this regard, more details can be found in the pioneering works by Guo et al…”

Section: Photoresponsivity and Photocurrentmentioning

confidence: 99%

Photoexcited charge carrier behaviors in solar energy conversion systems from theoretical simulations

Wei

Huang

Dai

2019

WIREs Comput Mol Sci

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Solar energy bears great potential in the substitution of conventional fossil fuels to enable a sustainable world. In order to harness and use solar energy, photocatalytic and photovoltaic systems made of semiconductor materials have been developed to convert sunlight into energy (electricity) based on the photoelectrochemical effects.Photoelectric events are related with the light-energy (electricity) conversion process, including photon absorption, photoexcited charge carrier separation and recombination, charge carrier transport, and photocurrent generation, as well as electron plasmonic resonance. We focus on the recent state-of-the-art simulation methods correspondingly mimicking these photogenerated charge carrier behaviors, taking electron-phonon, electron-exciton, and exciton-exciton interactions into account. Results can be obtained from the standard density function theory (DFT) for ground-state properties, many-body perturbation theory for band gap renormalization and optical absorption, time-domain DFT in combination with nonadiabatic molecular dynamics for photoexcitation dynamics, nonequilibrium Green's function and self-consistent theory for charge carrier transport properties, and classical Maxwell's equations in discrete dipole approximation for localized surface plasmon resonance absorption and near-field enhancement. In combination of the results from these simulation methods, a complete and consistent picture describing the fundamental photoelectric process in light-energy (electricity) conversion could be obtained. Simulation results offer guidelines for experimental efforts and provide new basic insights into the underlying mechanisms and the design principles for next-generation photocatalytic and photovoltaic devices of high solar light utilization efficiency.

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“…The functionalization and application of BP inevitably involve with strains originating from the supporting substrates and contacts . Moreover, the strain engineering is also a significant mechanism to tailor and modulate the physical properties of 2D materials Therefore, it is important to identify the strain‐induced deformation patterns and clarify the relationship between strain and resulted variations of lattice bond parameters in BP.…”

Section: Introductionmentioning

confidence: 99%

Strain engineering of the lattice vibration modes in monolayer black phosphorus

Zhang

Sun

et al. 2019

J Raman Spectroscopy

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Strain engineering can be served as an efficient tool for tuning physical properties of two‐dimentional (2D) materials. However, the quantifying strain and characterizing its spatially inhomogeneous distribution are always challenging. Here, we report the strain‐induced lattice vibration mode variations in monolayer black phosphorus (BP) and clarify the underlying mechanism resorting to the bond relaxation theory based on the combination of mass‐spring model and Lagrangian dynamics. We reveal that the Ag2 and B2g modes exhibit blue (red) shifts while the Ag1 mode shows a red (blue) shift through applying an armchair (zigzag) strain, which can be ascribed to the orientation‐dependent lattice vibration mode variations resulting from the different responses of force constants. Moreover, it is found that a negative Poisson's ratio along the out‐of‐plane direction emerges when the strain is applied in the zigzag direction. Our results offer intriguing insights into the underlying physics of vibration mode variations in strained BP‐like 2D layered materials.

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Two-Dimensional Photogalvanic Spin-Battery

Cited by 73 publications

References 59 publications

Photogalvanic‐Effect‐Induced Spin‐Polarized Current in Defective Silicane with H Vacancies

Photogalvanic‐Effect‐Induced Spin‐Polarized Current in Defective Silicane with H Vacancies

Photoexcited charge carrier behaviors in solar energy conversion systems from theoretical simulations

Strain engineering of the lattice vibration modes in monolayer black phosphorus

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