Two-dimensional numerical analysis of the floating region in SOI MOSFETs

Low Temperature Chatacterization of High-k Dielectric Metal Gate FD-SOI nMOSFETs

“…From the subthreshold slope at each measurement temperature, the interface state density is determined from equation (3) where Cox is the gate oxide capacitance, S the subthreshold swing, and k the Boltzman constant. In Fig.…”

“…Thin film silicon-on-insulator (SOI) technology has proved to offer advantages over bulk silicon technology, specially reduced short channel effects (1) and improved subthreshold swing (2). Fully Depleted (FD) SOI MOSFETs have demonstrated even more satisfying characteristics such as elimination of the kink effect over partially depleted devices (3).…”

Prevention of Single Event Upsets in Microelectronics

“…While it is true that the parasitic bipolar is not significant for modeling normal device operation, it becomes a major factor in modeling single-event effects as "ill be discussed in the following subsections. In addition, even for modeling normal operating conditions, the models appear complex both numerically [46][47][48] and computationally [49][50][51][52][53] or are limited in device structures or range of operating conditions [54][55][56][57]. More recent characterization and modeling efforts have concentrated on the optimization of device designs and the effects of scaling the SOI devices to smaller device sizes and thinner active layers [58][59][60][61], but again the concentration is on normal device operation or post irradiation operation (for example, increases in leakage currents and shifts in threshold voltages [43,60] CMOS-SOI devices are distinguished from bulk MOS devices by a decreased charge collection volume reducing the direct perturbation of the device during the penetration of an ion (single event).…”