Two-dimensional nanowire array formation on Si substrate using self-organized nanoholes of anodically oxidized aluminum

Shingubara, Shoso; Okino, Osamu; Sayama, Y; Sakaue, Hiroyuki; Takahagi, Takayuki

doi:10.1016/s0038-1101(99)00037-4

Cited by 70 publications

(27 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…2а, b); the interpore distance and cell diameter are 58.1 and 67.2 nm, respectively ( Table 1). The data on the surface morphology of oxalic acid anodic alumina films obtained in the present work agree with other literature reports [11,12].…”

Section: Resultssupporting

confidence: 93%

“…If U a is increased, as is Joule heating, the increase in pore diameter in nanoporous alumina takes place as well. This process is accomplished by the growth of the dissolution rate of alumina [11][12][13]22]. However, in this case, the increase in pore diameter due to both Joule heating and the growth of electric field strength is indistinguishable.…”

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Effect of continuous magnetic field on the growth mechanism of nanoporous anodic alumina films on different substrates

Vrublevsky

Ispas

Chernyakova

et al. 2016

J Solid State Electrochem

View full text Add to dashboard Cite

The effects induced by an external homogeneous magnetic field on the oxide film growth on aluminum in aqueous solutions of oxalic and sulfuric acid and on surface morphology of the alumina films were studied. Aluminum films of 100 nm thickness were prepared by thermal evaporation on SiO 2 /Si and glass-ceramic substrates. The pore diameter for oxalic acid alumina films on the SiO 2 /Si substrate decreased by 0.8 nm, the interpore distance by 5.9 nm, and cell diameter by 6.9 nm if a magnetic field of 0.5 T was applied. When aluminum was anodized in sulfuric acid on the same substrate, the significant changes in parameters of porous structure of alumina, which were similar to the ones in oxalic acid, are firstly observed in stronger magnetic fields (of 0.7 T). On the basis of data obtained in this study and of previous investigation on the negative space charge and thermally activated defects in anodic alumina, we concluded that the intensity of the magnetic field is associated with energy of electron traps and that the changes of cell diameter characterize the trap concentration. The energy of electron traps in oxalic acid alumina films was proved to be smaller than the one in films formed in sulfuric acid, but the concentration of traps was of the same order of magnitude. When the substrate was replaced with the glass-ceramic one, the pore diameter in oxalic acid alumina films increased to ca. 17.6 nm.

show abstract

Section: Resultssupporting

confidence: 93%

Section: Resultsmentioning

confidence: 99%

Effect of continuous magnetic field on the growth mechanism of nanoporous anodic alumina films on different substrates

Vrublevsky

Ispas

Chernyakova

et al. 2016

J Solid State Electrochem

View full text Add to dashboard Cite

show abstract

“…Porous alumina films formed by anodic oxidation of aluminum (Al) have been intensively studied for use as molds to form nanowires or dots by depositing various metals or semiconductors in them, since highly ordered nanohole arrays can be formed [1][2][3][4][5][6][7][8][9][10][11][12]. By the use of oxalic acid, sulfuric acid, or phosphoric acid, trigonal lattices of alumina nanoholes with distances of several tens of nm can be formed under the self-organization conditions of anodic oxidation.…”

Section: Introductionmentioning

confidence: 99%

Formation of aluminum nanodot array by combination of nanoindentation and anodic oxidation of aluminum

et al. 2003

View full text Add to dashboard Cite

Porous alumina films formed by aluminum anodic oxidation have been intensively studied to use them as molds to form nanowires or dots. Recently we established the formation of porous alumina on solid substrates such as Si, and found a formation of an ordered aluminum hexagonal dot array after finishing of anodic oxidation on a SiO 2 substrate. We investigated AFM nanoindentation to control the initial position of nanoholes during anodic oxidation, in order to realize nanoholes and dots with various sizes and densities. Arrays of nanoholes with a nearest neighbor distance from 50 to 120 nm were successfully formed. Al dot tetragonal and hexagonal arrays were formed after selective wet chemical etching of porous alumina film. Electron transport through Al nanodots array at low temperature exhibited a nonlinear characteristic with a suppression of current around zero bias, which strongly suggests existence of Coulomb blockade.

show abstract

“…The barrier layer can be removed by wet chemical thinning process of aluminum oxide after completion of anodization of Al [13][14][15]. Moreover, the Au functions as the protective layer for oxidation of the Si substrate during anodization.…”

Section: Methodsmentioning

confidence: 99%

Fabrication of an Array of Ni/NiO Nanowire-ReRAM Using AAO Template on Si

Shimizu

Sumita

Inoue

et al. 2012

e-J. Surf. Sci. Nanotechnol.

View full text Add to dashboard Cite

The resistive switching random access memory (ReRAM) device using Ni/NiO nanowire as a building block was demonstrated; this is prepared by a combination of top-down and bottom-up techniques. The Ni nanowire arrays on Si substrates were prepared by electroplating of Ni into the anodic aluminum oxide (AAO) template, and the surface of the nanowires were oxidized by O2 plasma treatment at room temperature. We observed an improvement of stability of the switching properties in the nanowire device compared with the device using nickel oxide thin film.

show abstract

Two-dimensional nanowire array formation on Si substrate using self-organized nanoholes of anodically oxidized aluminum

Cited by 70 publications

References 11 publications

Effect of continuous magnetic field on the growth mechanism of nanoporous anodic alumina films on different substrates

Effect of continuous magnetic field on the growth mechanism of nanoporous anodic alumina films on different substrates

Formation of aluminum nanodot array by combination of nanoindentation and anodic oxidation of aluminum

Fabrication of an Array of Ni/NiO Nanowire-ReRAM Using AAO Template on Si

Contact Info

Product

Resources

About