Two-dimensional layered materials: from mechanical and coupling properties towards applications in electronics

Abstract

With the increasing interest in nanodevices based on two-dimensional layered materials (2DLMs) after the birth of graphene, the mechanical and coupling properties of these materials, which play an important role in determining the performance and life of nanodevices, have drawn increasingly more attention.

Reduced Fracture Strength of 2D Materials Induced by Interlayer Friction

“…2D layered materials (2DLMs), such as graphene and transition metal dichalcogenides (TMDs), have drawn increasingly more attention owing to their novel physical properties [1][2][3][4][5] and their potential applications as the functional membranes in flexible electronics and nano-electromechanical systems (NEMS). [6][7][8][9] The mechanical properties of 2DLMs play vital roles in mastering the performances and service life of these devices.…”

High-performance ultra-violet phototransistors based on CVT-grown high quality SnS2flakes

“…have exhibited extraordinary properties in many elds, emerging as suitable candidates for next-generation electronic or photoelectronic systems beyond the current silicon era. [9][10][11][12][13] The surprising and appealing characteristics found in the low-dimensional limit stimulate the exploration of other van der Waals layered materials. [14][15][16] Nowadays, various layered semiconductors can be prepared via top-down (e.g.…”

Flexible Photodetector Based on 2D Materials: Processing, Architectures, and Applications

“…This wide difference in breaking strain is justified by the difference in intrinsic properties such as chemical bond strength and type. [38,39] Although, when analyzing the same 2D material, factors such as the number of layers and the existence of vacancies, grain boundaries, and dislocations [40,41] also play a major rule on the strain limit. Despite this fact, the 2D materials strain limit is well above the polymeric substrate used in flexible electronics ( Table 2).…”

“…Similarly, transition metal dichalcogenides (TMDs) and III–V semiconductors demonstrate experimental strain values ranging from 2% to 11% ( Table 1 ). This wide difference in breaking strain is justified by the difference in intrinsic properties such as chemical bond strength and type . Although, when analyzing the same 2D material, factors such as the number of layers and the existence of vacancies, grain boundaries, and dislocations also play a major rule on the strain limit.…”