High-performance ultra-violet phototransistors based on CVT-grown high quality SnS₂flakes

Abstract

High-performance UV photodetectors established on CVT-grown SnS2flakes provide an efficient way to choose 2D crystals with an optimal thickness.

Giant‐Enhanced SnS2 Photodetectors with Broadband Response through Oxygen Plasma Treatment

“…As far as we know, this excellent performance is the highest ever recorded by all the numerous reported SnS 2 devices. [ 9,10,20,38 ] However, we also observed that the two quantities' values ( R λ and EQE) slightly changed as the light power increases, which could be due to the absorbance saturation attained by the photodetector.…”

“…First, from the extracted electrical measurements, the back‐gate FET device exhibits an intrinsic n‐type semiconducting response that is compatible with earlier investigated SnS 2 devices. [ 10,38 ] Here, we calculated the field‐effect mobilities for the original and O 2 ‐plasma‐treated devices, which are 2.71 and 3.10 cm 2 V −1 s −1 , respectively, using; , ( L is the length and W is the width of the device, and C i is equivalent 11.6 nF cm −2 , which is the capacitance per unit area for 300 nm SiO 2 substrate used). [ 21 ] In an ambient condition, the extracted carrier mobility from the treated SnS 2 FET is one of the highest reported so far.…”

“…2D tin disulfide (SnS 2 ) is a vital metal dichalcogenide semiconductor primarily due to its layered structure, [ 1 ] wide‐bandgap (2.2–2.4 eV), [ 2,3 ] high absorption coefficient ≈10 4 cm −1 , [ 4 ] and as a cheap and sustainable source among others. [ 5,6 ] These novel properties have made it be widely studied in the application of electronic, [ 7–9 ] optoelectronic, [ 10–13 ] and energy storage. [ 4,5,14 ] In comparison with the famous transition metal dichalcogenides (MoS 2 , WS 2 ), [ 15–19 ] SnS 2 ‐based photodetector has been reported to demonstrate photoresponsivity as high as 261 A W −1 , [ 20 ] and 230 cm 2 V −1 s −1 carrier mobility for solution‐gated field‐effect transistors (FETs), [ 21 ] hence making it a promising candidate in electronic and optoelectronic applications.…”

“…Moreover, as far as we know, the remarkably achieved broad response and excellent photoresponsivity for the O 2 ‐plasma‐treated SnS 2 photodetector exceeded all the previously investigated SnS 2 photodetectors. [ 10,20,24 ] Thus, this simple approach could be a reliable technique in boosting the performance of some 2D materials for electronic and optoelectronic applications.…”

A high performance self-powered photodetector based on a 1D Te–2D WS2 mixed-dimensional heterostructure

“…Due to the quantum confinement effect and the strong interlayer coupling effect, two-dimensional (2D) layered materials such as transition metal dichalcogenides (TMDs) (Molybdenum disulfide, Tungsten disulfide, etc) have attracted tremendous attentions with unique thickness dependent and strain-tunable physical properties [1][2][3][4][5][6][7]. In recent years, beyond the discovery of graphene, other novel monoelemental 2D layered materials such as black phosphorus (BP), arsenic (As), bismuth (Bi), tellurium (Te), antimonene (Sb), which show tunable band gap, theoretical high carrier mobility, atomically flat surface, strong spin orbital torque, high light absorption efficiency, have been experimentally explored as promising candidates for applications in filed effect transistors (FETs), spintronics and photodetectors (PDs) [8][9][10][11].…”