2018
DOI: 10.1039/c7cs00886d
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Two-dimensional halide perovskite nanomaterials and heterostructures

Abstract: Over the last several years, there has been tremendous progress in the development of nanoscale halide perovskite materials and devices that possess a wide range of band gaps and tunable optical and electronic properties. Particularly, the emerging two-dimensional (2D) forms of halide perovskites are attracting more interest due to the long charge carrier lifetime, high photoluminescence quantum efficiency, and great defect tolerance. Interfacing 2D halide perovskites with other 2D materials including graphene… Show more

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Cited by 371 publications
(324 citation statements)
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References 190 publications
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“…As compared to mechanical exfoliation and chemical vapor deposition techniques, solution-processing approach was more effective to achieve high-quality crystals [93]. For instance, L. Dou et al synthesized blue emitting 2D sheets with an unusual structural relaxation and photoluminescence shift [8].…”
Section: D and Quasi-2d Metal Halide Hybridsmentioning
confidence: 99%
“…As compared to mechanical exfoliation and chemical vapor deposition techniques, solution-processing approach was more effective to achieve high-quality crystals [93]. For instance, L. Dou et al synthesized blue emitting 2D sheets with an unusual structural relaxation and photoluminescence shift [8].…”
Section: D and Quasi-2d Metal Halide Hybridsmentioning
confidence: 99%
“…a2) Typical TEM image of CsPbBr 3 nanocrystal (NC). [22] Analysis of the optoelectronic properties of the abovementioned perovskites at different dimensions and varying chemical compositions is necessary to determine their target applications. [19] Copyright 2019, American Chemical Society.…”
Section: Basic Structure and Chemistrymentioning
confidence: 99%
“…Scale bar, 10 lm. [22,23,28] With increasing layer thickness (n > 2), there is room for direct exciton dissociation pathway via the so-called "edge states" in 2D perovskites, which leads to more extracted free charges and higher device performance. [21] Copyright 2019, Science.…”
Section: Basic Structure and Chemistrymentioning
confidence: 99%
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“…The memory device with a structure of Al/2H-MoS 2 -PVP/ITO/PET exhibited bipolar resistive switching memory ( Figure 4c). [116] Moreover, the heterojunction structure could be applied in memory applications that offer novel functionality as photon recording. Moreover, mixed phase (2H and 1T) hybrid materials which possess semiconducting and metallic region, the Al/1T@2H-MoS 2 -PVP/ITO/PET showed WORM memory effect due to the internal electric field which protects the trapped electrons from being detrapped.…”
Section: Tmd-related Composites and Heterojunction-based Memorymentioning
confidence: 99%