2016
DOI: 10.1002/advs.201500413
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Two‐Dimensional Fluorinated Graphene: Synthesis, Structures, Properties and Applications

Abstract: Fluorinated graphene, an up‐rising member of the graphene family, combines a two‐dimensional layer‐structure, a wide bandgap, and high stability and attracts significant attention because of its unique nanostructure and carbon–fluorine bonds. Here, we give an extensive review of recent progress on synthetic methods and C–F bonding; additionally, we present the optical, electrical and electronic properties of fluorinated graphene and its electrochemical/biological applications. Fluorinated graphene exhibits var… Show more

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Cited by 489 publications
(376 citation statements)
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“…An intense peak at about 1215 cm −1 and a shoulder one at about 1340 cm −1 appear for all the FG‐x samples (Figure a), which are the characteristic bands of the C−F and C−F 2 bonds, respectively ,,. No obvious absorption peaks at about 1100 cm −1 , responding to the semi‐ionic C−F bonds, are found in the FTIR spectra due to the low content of semi‐ionic C−F bonds. The exact vibrational wavenumber of C−F bonds is 1213.8, 1215.9, 1216.1, 1217.7 and 1217.8 cm −1 for FG‐300, FG‐350, FG‐400, FG‐425, and FG‐450, respectively.…”
Section: Resultsmentioning
confidence: 91%
“…An intense peak at about 1215 cm −1 and a shoulder one at about 1340 cm −1 appear for all the FG‐x samples (Figure a), which are the characteristic bands of the C−F and C−F 2 bonds, respectively ,,. No obvious absorption peaks at about 1100 cm −1 , responding to the semi‐ionic C−F bonds, are found in the FTIR spectra due to the low content of semi‐ionic C−F bonds. The exact vibrational wavenumber of C−F bonds is 1213.8, 1215.9, 1216.1, 1217.7 and 1217.8 cm −1 for FG‐300, FG‐350, FG‐400, FG‐425, and FG‐450, respectively.…”
Section: Resultsmentioning
confidence: 91%
“…[10][11][12] A thorough review of FG is also recently published. [12] The binding of F radicals to graphene leads to surface activation and band gap opening, [11][12][13] rendering the resultant FG useful for applications ranging from as a seed layer for dielectric deposition [14,15] to as a growth precursor for synthesis of new 2D materials [16] and a building block for 2D heterostructures.…”
Section: Introductionmentioning
confidence: 99%
“…[10][11][12] A thorough review of FG is also recently published. [12] The binding of F radicals to graphene leads to surface activation and band gap opening, [11][12][13] rendering the resultant FG useful for applications ranging from as a seed layer for dielectric deposition [14,15] to as a growth precursor for synthesis of new 2D materials [16] and a building block for 2D heterostructures. [17] While FG, like some of the other functionalized graphene forms, holds great promises as a complementary material for next generation graphene-based electronics, it can readily defluorinate under humid conditions or when in contact with acetone [7,18] Such a phenomenon, considering acetone an important solvent for FG transfer and patterning process, can seriously undermine the potential of FG for widespread applications.…”
Section: Introductionmentioning
confidence: 99%
“…1(b). 17 In our report describing the development of fluorographene oxide [FGO, a structure comparison between graphene oxide (GO) and FGO is shown in Fig. 2] via oxidative exfoliation of fluorographite polymer, the water wetting properties of different amount of F containing FGO is demonstrated.…”
Section: Fluorination Of Graphene-synthesis and Control Of Fluorinementioning
confidence: 98%
“…Moreover, graphene can be derived from graphite, an abundant material at the earth's surface, make it as a potential candidate not only for basic studies but for practical applications such as electronic devices and chemical sensors too. [17][18][19] Pristine graphene is a semimetal having zero band gap which limits it applications. 18 Tuning the band gap of graphene with heteroatoms has a clear edge over size/shape tunable band gap modification due to the large control over the dopants level and its reproducibility.…”
Section: Introduction To Engineering Of Graphene-dopingmentioning
confidence: 99%