Two-dimensional dopant imaging of silicon carbide devices by secondary electron potential contrast

Buzzo, Marco; Ciappa, Mauro; Millán, José del R.; Godignon, P.; Fichtner, W.

doi:10.1016/j.mee.2006.10.055

Cited by 14 publications

(13 citation statements)

References 5 publications

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“…These effects, both result into the reduction of the number of SE collected by the detector. In summary, the SEPC image of unbiased junction is expected to consist of bright zones, corresponding of p-doped regions, of dark zones corresponding to n-doped regions, and of a still darker area corresponding to the SCR [28]- [30].…”

Section: Secondary Electron Potential Contrastmentioning

confidence: 98%

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Electrical Homo-Junction Delineation Techniques: A Comparative Study

Vivet¹,

Diogo²,

Aubert³

et al. 2016

MSA

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In active semiconductor devices, the junction characteristics are critical for the electrical performance. As an alternative of the atomic force microscopy (AFM)-based electrical techniques which provide unique junction characterization, other methods are dedicated for the delineation of the electrical junction such as the wet chemical etching, the electrochemical plating method, the Seebeck effect imaging (SEI) method, the electron-beam induced current (EBIC) technique and the secondary electron potential contrast (SEPC) method. The aim of this paper is in the one hand to compare these five techniques in term of sample preparation, spatial application range, spatial resolution, simplicity and information displayed. In the other hand, this review aims to provide some guidelines for the appropriate delineation method(s) selection. It was confirmed that chemical based techniques are the simplest junction delineation methods but exhibit some drawbacks in term of spatial resolution and reproducibility. Despite of a limited spatial resolution, it was evidenced that EBIC can provide accurate electrical characterization of the junction. Finally, it was demonstrated that SEPC is the most promising technique providing the higher spatial resolution. The effect of the sample preparation method has been described. Even if the comparison was mainly based on homo-micro-Silicon junctions (n-p and n-p-n-p), the results were also discussed for short SiC junctions. The importance of the analysis context was considered in this paper and analysis flow was suggested for specific analysis cases.

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Section: Secondary Electron Potential Contrastmentioning

confidence: 98%

“…The built-in potential (V bi ) in anisotype junctions, can be expressed as a function of the intrinsic carrier density (n i ) and the concentration of acceptors and donors (N A and N D respectively) by [28]:…”

Section: Secondary Electron Potential Contrastmentioning

confidence: 99%

Electrical Homo-Junction Delineation Techniques: A Comparative Study

Vivet¹,

Diogo²,

Aubert³

et al. 2016

MSA

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“…This is equivalent to shifting the SE energy spectrum towards higher or lower energies respectively. Any potential on an SWCNT or electrode will infl uence SE image contrast both due to changes in the SE yield (VC Type 2) and the deflection of SEs emitted from the substrate in the vicinity of the nanotube or electrode by transverse electric fi elds (VC Type 3) [10,17].…”

Section: Nano Researchmentioning

confidence: 99%

“…VC Types 1 and 2 have been used in microelectronics for failure location in interconnects [16]. An associated mechanism (sometimes called VC Type 3) has been used to image dopant concentrations [17] at inorganic bulk material interfaces. Croitoru et al [18] and Jesse et al [19] demonstrated contrast enhancement in multiwall and bundles of singlewall carbon nanotubes, respectively, under external bias conditions, and explained their results in terms of VC Types 2 and 3.…”

Section: Introductionmentioning

confidence: 99%

Imaging electronic structure of carbon nanotubes by voltage-contrast scanning electron microscopy

Vijayaraghavan¹,

Blatt

Marquardt

et al. 2008

Nano Res.

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We introduce voltage-contrast scanning electron microscopy (VC-SEM) for visual characterization of the electronic properties of single-walled carbon nanotubes. VC-SEM involves tuning the electronic band structure and imaging the potential profi le along the length of the nanotube. The resultant secondary electron contrast allows to distinguish between metallic and semiconducting carbon nanotubes and to follow the switching of semiconducting nanotube devices, as confi rmed by in situ electrical transport measurements. We demonstrate that high-density arrays of individual nanotube devices can be rapidly and simultaneously characterized. A leakage current model in combination with fi nite element simulations of the device electrostatics is presented in order to explain the observed contrast evolution of the nanotube and surface electrodes. This work serves to fi ll a void in electronic characterization of molecular device architectures.

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“…Besides the complicated analysis of contrast doping [31][32][33][34][35][36], the present contribution cannot pretend to cover all the aspects of material contrast such as subsurface imaging of Si nano-patterns embedded in SiO 2 [37] or the good contrast between amorphous and dendritic SiGe [38]. It is only hoped that the present contribution is a step towards image understanding and a step towards a truly quantitative scanning electron microscopy.…”

Section: Resultsmentioning

confidence: 97%

On some contrast reversals in SEM: Application to metal/insulator systems

Cazaux

2008

Ultramicroscopy

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Two-dimensional dopant imaging of silicon carbide devices by secondary electron potential contrast

Cited by 14 publications

References 5 publications

Electrical Homo-Junction Delineation Techniques: A Comparative Study

Electrical Homo-Junction Delineation Techniques: A Comparative Study

Imaging electronic structure of carbon nanotubes by voltage-contrast scanning electron microscopy

On some contrast reversals in SEM: Application to metal/insulator systems

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