Two dimensional crystal tunneling devices for THz operation

Kong, Byoung Don; Zeng, Caifu; Gaskill, D. Kurt; Wang, K. L.

doi:10.1063/1.4773514

Cited by 27 publications

(22 citation statements)

References 31 publications

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“…In contrast to pristine graphene, monolayer MoS 2 which also comes under a new classification ''graphene analogs'' [21] with the similar layered structure as of graphene, has a direct band gap of approximately 1.90 eV [22]. 2D-MoS 2 has, therefore, come up as a competing material for nanoelectronics and is expected to show potential in wide range of practical applications [9,11,[23][24][25][26][27][28][29].…”

Section: Introductionmentioning

confidence: 98%

Tunable Electronic and Dielectric Properties of Molybdenum Disulfide

Kumar

Ahluwalia

2013

Lecture Notes in Nanoscale Science and Technology

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We report tunability in electronic and dielectric properties of a technologically promising nanomaterial MoS 2 . The properties of MoS 2 can be tuned by varying the layer thickness, by applying mechanic strain, by tuning the interlayer distance, and by applying external electric field. Reducing the slab thickness systematically from bulk to monolayers causes blue shift in the band gap energies, thereby, resulting in tunability of the electronic band gap. By reducing the number of layers from bulk to monolayer limit, electron energy loss spectra (EELS) shows red shift in the energies of both p and p þ r plasmons. Mechanical strains reduce the band gap of monolayer MoS 2 by causing a direct-to-indirect band gap transitions and finally rendering it into metal at critical values depending on the types of applied strain. Dielectric properties of monolayer MoS 2 too get influenced by the type of applied strain. Imaginary part of dielectric function (e 2 ) shows redshift in the structure peak energy on the application of strains with significant dependence on the types of applied strain. In-plane strains also cause semiconductormetal transitions (e T ) in bilayer sheets of MoS 2 . The energy gap of semiconducting bilayer MoS 2 gets reduced continuously by reducing the bilayer separation, eventually rendering it metallic at critical value of interlayer distance. Electrically gated semiconducting bilayer MoS 2 is also found to show reduction in the band gap on increasing the magnitude of electric field and results in band gap closure at a critical value of the field.

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Section: Introductionmentioning

confidence: 98%

Tunable Electronic and Dielectric Properties of Molybdenum Disulfide

Kumar

Ahluwalia

2013

Lecture Notes in Nanoscale Science and Technology

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“…[1][2][3][4] In particular, silicene [5][6][7][8] and molybdenum disulfide [9][10][11][12] have gained much interest due to their unique properties in electronics, optoelectronics, and magnetics. Silicene is expected to share certain superior properties of graphene due to its structural similarity and the close position in the periodic table.…”

Section: Introductionmentioning

confidence: 99%

Intrinsic electrical transport properties of monolayer silicene and MoS2from first principles

et al. 2013

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The electron-phonon interaction and related transport properties are investigated in monolayer silicene and MoS 2 by using a density functional theory calculation combined with a full-band Monte Carlo analysis. In the case of silicene, the results illustrate that the out-of-plane acoustic phonon mode may play the dominant role unlike its close relative, graphene. The small energy of this phonon mode, originating from the weak sp 2 π bonding between Si atoms, contributes to the high scattering rate and significant degradation in electron transport. In MoS 2 , the longitudinal acoustic phonons show the strongest interaction with electrons. The key factor in this material appears to be the Q valleys located between the and K points in the first Brillouin zone as they introduce additional intervalley scattering. The analysis also reveals the potential impact of extrinsic screening by other carriers and/or adjacent materials. Finally, the effective deformation potential constants are extracted for all relevant intrinsic electron-phonon scattering processes in both materials.

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“…R ecently, monolayers of hexagonal boron nitride (h-BN) have been successfully used as a smooth substrate for highperformance graphene devices [1][2][3][4][5] and as barrier materials in vertical heterostructures in combination with graphene and transition metal dichalcogenides [5][6][7] . Owing to the exceptional thermal and chemical stabilities 8 , h-BN could become an ideal coating material against oxidation at high temperatures if large area, high-quality, uniform atomic layers could be prepared on surfaces to be protected.…”

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confidence: 99%

Ultrathin high-temperature oxidation-resistant coatings of hexagonal boron nitride

et al. 2013

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Hexagonal boron nitride is a two-dimensional layered material that can be stable at 1,500°C in air and will not react with most chemicals. Here we demonstrate large-scale, ultrathin, oxidation-resistant coatings of high-quality hexagonal boron nitride layers with controlled thicknesses from double layers to bulk. We show that such ultrathin hexagonal boron nitride films are impervious to oxygen diffusion even at high temperatures and can serve as highperformance oxidation-resistant coatings for nickel up to 1,100°C in oxidizing atmospheres. Furthermore, graphene layers coated with a few hexagonal boron nitride layers are also protected at similarly high temperatures. These hexagonal boron nitride atomic layer coatings, which can be synthesized via scalable chemical vapour deposition method down to only two layers, could be the thinnest coating ever shown to withstand such extreme environments and find applications as chemically stable high-temperature coatings.

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Two dimensional crystal tunneling devices for THz operation

Cited by 27 publications

References 31 publications

Tunable Electronic and Dielectric Properties of Molybdenum Disulfide

Tunable Electronic and Dielectric Properties of Molybdenum Disulfide

Intrinsic electrical transport properties of monolayer silicene and MoS2from first principles

Ultrathin high-temperature oxidation-resistant coatings of hexagonal boron nitride

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