Two classes of recombination behavior as studied by the technique of the electron beam induced current: NiSi2 particles and misfit dislocations in Ni contaminated n-type silicon

Abstract

The recombination activity of well-defined NiSi2 precipitates and of misfit dislocations in Ni contaminated Si samples has been investigated using the technique of the electron-beam-induced current in dependence on sample temperature and beam current. Individual NiSi2 precipitates are found to show a high recombination activity, increasing slightly with temperature and decreasing with increasing beam current. On the other hand, misfit dislocations are nearly inactive at room temperature and increase their activity upon cooling the sample. The experimental findings are discussed in terms of recombination activity controlled by either defect charging or shallow centers.

On the origin of EBIC defect contrast in silicon. A reflection on injection and temperature dependent investigations

“…The group-1 behaviour observed for Nisi, precipitates in n-types Si [21] is also a result of the existence of a depletion region around these particles, which act as inner Schottky barriers. The assumption of the existence of a depletion region at the Nisi, precipitates fits shallow levels near the band edges a decrease of recombination lifetime z when raising at fixed temperature the injection level (see Fig.…”

“…[12, 15, 171. A few examples of our recent investigations are given now, illustrating what can be found in this field. More details of these studies will be dealt with in [21,221. Fig.…”