Two-channel anomalous Hall effect originating from the intermixing in 
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 thin films

Zhang, Y.; Granville, S.

doi:10.1103/physrevb.106.144414

Cited by 5 publications

(1 citation statement)

References 42 publications

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“…A signature feature of THE i.e. hump-like features in Hall resistivity is seen in presence of a magnetic field and within the temperature ranging from 10 to 120 K. In this connection, it is indispensable to distinguish the genuine occurrence of hump-like features of THE as an artifact may come from the inhomogeneity, temperature or electric field range and two phases with opposite extraordinary or anomalous Hall effect polarity [20,21]. Here, interfacial DMI induced THE is confirmed from the magnitude of THE which rapidly decreases with increasing thickness of SrRuO 3 layer and fully vanishes above 6 uc.…”

Section: The At Magnetic Oxide Interfacesmentioning

confidence: 99%

Topological phenomena at the oxide interfaces

Ravindran

Dey²,

Keshri³

et al. 2023

Mater. Quantum. Technol.

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Topological phenomena at the oxide interfaces attract the scientific community for the fertile ground of exotic physical properties and highly favorable applications in the area of high-density low-energy nonvolatile memory and spintronic devices. Synthesis of atomically controlled ultrathin high-quality films with superior interfaces and their characterization by high resolution experimental set up along with high output theoretical calculations matching with the experimental results make this field possible to explain some of the promising quantum phenomena and exotic phases. In this review, we highlight some of the interesting interface aspects in ferroic thin films and heterostructures including the topological Hall effect in magnetic skyrmions, strain dependent interlayer magnetic interactions, interlayer coupling mediated electron conduction, switching of noncollinear spin texture etc. Finally, a brief overview followed by the relevant aspects and future direction for understanding, improving, and optimizing the topological phenomena for next generation applications are discussed.

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Section: The At Magnetic Oxide Interfacesmentioning

confidence: 99%

Topological phenomena at the oxide interfaces

Ravindran

Dey²,

Keshri³

et al. 2023

Mater. Quantum. Technol.

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Decoupling topological antiskyrmion and non-topological magnetic phases in D2d symmetric Mn–Ni–Ga single crystalline device

Jamaluddin,

Sen,

Chakrabartty

et al. 2023

Applied Physics Letters

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Here, we present the finding of two types of distinct Hall signals in the single crystalline Hall devices of a D2d symmetric antiskyrmion host Mn–Ni–Ga sample. The out-of-plane device, where the magnetic field is applied along the [001] direction, exhibits a dip-like anomaly in the Hall resistivity data, signifying the presence of topological Hall signal originating from the antiskyrmion phase. Most importantly, we demonstrate the robustness of the antiskyrmion phase against an oblique field where the topological Hall signal survives up to a tilting angle of 75° with respect to the c-axis. In contrast, the Hall resistivity data for the in-plane device exhibit an aberrant hump-like feature that can be tuned with applying a rotating magnetic field. We show that this hump-like anomaly emerges from the existence of a two-component anomalous Hall effect arising due to the presence of twinning microstructure. The present study provides an important insight into the stability and evolution of the antiskyrmion phase under the oblique magnetic fields and helps in decoupling of anomalous Hall signals in the non-topological magnetic phases.

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Interface-induced transverse resistivity anomaly in AgNbO3/SrRuO3 heterostructures

Liu,

Xu,

Chen

et al. 2024

APL Materials

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The transverse resistivity anomaly with a hump feature, associated with topological magnetic textures, is of paramount importance for the applications of next-generation chiral spintronic devices. However, the origin of the hump feature still remains debated due to the complicated mechanism, not merely assigned to the intrinsic topological Hall effect (THE). In this work, we observe the apparent transverse resistivity hump characteristic superimposed on the Hall signals in AgNbO3/SrRuO3 (ANO/SRO) heterostructures. The intrinsic THE is ruled out by minor-loop and current density measurements. Combining the microscopic characterization and the two-channel anomalous Hall effect fitting, the hump feature is unambiguously attributed to the synergetic contribution from the SRO layer and the interfacial intermixing thin layer of ANO and SRO.

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Two-channel anomalous Hall effect originating from the intermixing in Mn2CoAl/Pd thin films

Cited by 5 publications

References 42 publications

Topological phenomena at the oxide interfaces

Topological phenomena at the oxide interfaces

Decoupling topological antiskyrmion and non-topological magnetic phases in D2d symmetric Mn–Ni–Ga single crystalline device

Interface-induced transverse resistivity anomaly in AgNbO3/SrRuO3 heterostructures

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