Interface-induced transverse resistivity anomaly in AgNbO3/SrRuO3 heterostructures

Abstract

The transverse resistivity anomaly with a hump feature, associated with topological magnetic textures, is of paramount importance for the applications of next-generation chiral spintronic devices. However, the origin of the hump feature still remains debated due to the complicated mechanism, not merely assigned to the intrinsic topological Hall effect (THE). In this work, we observe the apparent transverse resistivity hump characteristic superimposed on the Hall signals in AgNbO3/SrRuO3 (ANO/SRO) heterostructures. The intrinsic THE is ruled out by minor-loop and current density measurements. Combining the microscopic characterization and the two-channel anomalous Hall effect fitting, the hump feature is unambiguously attributed to the synergetic contribution from the SRO layer and the interfacial intermixing thin layer of ANO and SRO.