2016
DOI: 10.1021/acsnano.6b01568
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Two-Carrier Transport Induced Hall Anomaly and Large Tunable Magnetoresistance in Dirac Semimetal Cd3As2 Nanoplates

Abstract: Cd 3 As 2 is a model material of Dirac semimetal with a linear dispersion relation along all three directions in the momentum space. The unique band structure of Cd 3 As 2 makes it with both Dirac and topological properties. It can be driven into a Weyl semimetal by the symmetry breaking or a topological insulator by enhancing the spin-orbit coupling. Here we report the temperature and gate voltage dependent magnetotransport properties of Cd 3 As 2 nanoplates with Fermi level near the Dirac point. The Hall ano… Show more

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Cited by 71 publications
(74 citation statements)
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“…The non-linear behavior and crossover in sign of Rxy are consistent with the emergence of parallel conduction from a hole-gas in the silicon near the interface. To quantify the sheet density and mobility of the hole-gas, we analyze the Rxy data using a 2-carrier model that is parameterized by the sheet carrier densities nh , ne and mobilities µh, µe of the hole and electron carriers in the Si and SNTO, respectively (see Supporting Information) [15]. observed for the x = 0.20 heterojunction at T > 320 K. An average µh of ~ 500 cm 2 V -1 s -1 is derived from the fits for the heterojunctions that exhibit a hole gas, which is consistent with the bulk hole mobility of Si.…”
mentioning
confidence: 99%
“…The non-linear behavior and crossover in sign of Rxy are consistent with the emergence of parallel conduction from a hole-gas in the silicon near the interface. To quantify the sheet density and mobility of the hole-gas, we analyze the Rxy data using a 2-carrier model that is parameterized by the sheet carrier densities nh , ne and mobilities µh, µe of the hole and electron carriers in the Si and SNTO, respectively (see Supporting Information) [15]. observed for the x = 0.20 heterojunction at T > 320 K. An average µh of ~ 500 cm 2 V -1 s -1 is derived from the fits for the heterojunctions that exhibit a hole gas, which is consistent with the bulk hole mobility of Si.…”
mentioning
confidence: 99%
“…Cd3As2 nanoplates were synthesized from Cd3As2 powders (Alfa Aesar 99.99% purity) by chemical vapor deposition with a silicon substrate placed at downstream to collect the products [38,[60][61][62]. Before the growth, the system was flushed several times with Argon gas to thoroughly remove the oxygen in the tube.…”
Section: Methodsmentioning
confidence: 99%
“…A typical HRTEM image shown in Figure a demonstrates the single crystalline nature of the Cd 3 As 2 nanoplates. The selected area electron diffraction (SAED) pattern (see the inset of Figure a) shows the crystal planes of tetragonal structure (space group: I4 1 /acd ), and indicates the hexagonal symmetry of the (112) surface plane . According to our previous work, the Cd 3 As 2 nanoplates show electron mobility ≈1.3 × 10 4 cm 2 V −1 s −1 and hole mobility ≈9 × 10 2 cm 2 V −1 s −1 at 1.5 K .…”
mentioning
confidence: 75%
“…The Cd 3 As 2 nanoplates were synthesized by chemical vapor deposition method with the thickness ranging from 200 to 700 nm . The nanoplates are with high crystal quality as characterized by statistic high‐resolution transmission electron microscopy (HRTEM) analysis of more than 50 samples.…”
mentioning
confidence: 99%