2008 Symposium on VLSI Technology 2008
DOI: 10.1109/vlsit.2008.4588577
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Two-bit cell operation in diode-switch phase change memory cells with 90nm technology

Abstract: This paper firstly reports key factors which are to be necessarily considered for the successful two-bit (four-level) cell operation in a phase-change random access memory (PRAM). They are 1) the writeand-verify (WAV) writing of four-level resistance states and 2) the moderate-quenched (MQ) writing of intermediate resistance levels, 3) the optimization of temporal resistance increase (so-called resistance drift) and 4) of resistance increase after thermal annealing. With taking into account of them, we realize… Show more

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Cited by 77 publications
(46 citation statements)
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“…In principle, a variation of the amorphous volume enables the storage of multiple resistance states in a single cell. This way the storage density of the memory could be greatly increased [6][7][8][9][10][11]. In practice, the phenomenon of resistance drift, i.e., the change of resistivity of amorphous phase change materials over time, precludes a simple implementation of the multibit storage on a chip level.…”
Section: Introductionmentioning
confidence: 99%
“…In principle, a variation of the amorphous volume enables the storage of multiple resistance states in a single cell. This way the storage density of the memory could be greatly increased [6][7][8][9][10][11]. In practice, the phenomenon of resistance drift, i.e., the change of resistivity of amorphous phase change materials over time, precludes a simple implementation of the multibit storage on a chip level.…”
Section: Introductionmentioning
confidence: 99%
“…Phase change memory technology (PCRAM) is an active field of research with the objective to realize CMOS compatible, multi-bit nonvolatile memories. [1][2][3][4][5] In a PCRAM cell, a nano-sized volume of phase change material (chalcogenides such as Ge 2 Sb 2 Te 5 or GeTe) is switched quickly (order of ns (Ref. 6)) and reversibly (1 Â 10 11 times (Ref.…”
mentioning
confidence: 99%
“…Further define π(φ) = {a : F A (a) ∈ γ(φ)} Then for any µ A -measurable set δ where the last equality follows from (8) and (11). At this moment, we invoke Lemma 3 to deduce that This proves the lemma.…”
Section: ) Proof Of I(dmentioning
confidence: 72%
“…In the latter, multiple bits/cell storage is attained in practical devices by employing an iterative feedback algorithm that is referred to as a "write-and-verify" strategy. Also in demonstrations of multiple bit/cell PCM [9][10] [11], similar techniques are exploited.…”
Section: Introductionmentioning
confidence: 99%