2018
DOI: 10.1016/j.tsf.2017.10.047
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Twisting fatigue in multilayer films of Ag-alloy with indium tin oxide on polyethylene terephthalate for flexible electronics devices

Abstract: Twisting fatigue in multilayer films of Ag-alloy with indium tin oxide on polyethylene terephthalate for flexible electronics devices. Thin Solid Films, 645 pp. 241-252.For guidance on citations see FAQs.

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Cited by 14 publications
(10 citation statements)
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“…Figure 12 shows the percentage increase in the electrical resistance as a function of the number of cycles under fatigue and fatigue-corrosion. The mechanism of bending fatigue appears to be similar to that observed in our previous work for the twisting fatigue test [24], and the observed increase in the electrical resistance can be split into two distinct regions. In the first region (region I), the increment in the normalized electrical resistance is associated with the dimensional change of the compliant substrate until an equilibrium size is attained [25].…”
Section: B Combined Corrosion and Fatigue Degradation Of Ito/ag-alloy/itosupporting
confidence: 82%
“…Figure 12 shows the percentage increase in the electrical resistance as a function of the number of cycles under fatigue and fatigue-corrosion. The mechanism of bending fatigue appears to be similar to that observed in our previous work for the twisting fatigue test [24], and the observed increase in the electrical resistance can be split into two distinct regions. In the first region (region I), the increment in the normalized electrical resistance is associated with the dimensional change of the compliant substrate until an equilibrium size is attained [25].…”
Section: B Combined Corrosion and Fatigue Degradation Of Ito/ag-alloy/itosupporting
confidence: 82%
“…[60][61][62] It is also used in commercially available superconducting magnets (e.g., Nb3Sn), 63,64 nuclear fuels (e.g. ZrySnx) 65,66 and in optoelectronic devices [67][68][69] as well as nanostructured materials, 70,71 in addition to the earlier mentioned applications in Li-ion batteries. 58,59 Providing a local PP of Sn for accurate computations of the physical and chemical properties of Sn and Sn alloys, including the Sn phase separations, could fundamentally accelerate further technological advances based on microscopic and mesoscopic Snsystems.…”
Section: Introductionmentioning
confidence: 99%
“…Further applications of Sn can be found in semiconductors such as in SiSn, GeSn, and SnS 2 alloys where it can be used for bandgap engineering of materials, in piezoelectric and infrared devices. It is also used in commercially available superconducting magnets (e.g., Nb 3 Sn), , in nuclear fuels (e.g., Zr y Sn x ), , and in optoelectronic devices as well as nanostructured materials, , in addition to the earlier mentioned applications in metal-ion batteries. , Providing a local PP of Sn for accurate computations of the physical and chemical properties of Sn and Sn alloys, including the Sn phase separations, could fundamentally accelerate further technological advances based on microscopic and mesoscopic Sn systems.…”
Section: Introductionmentioning
confidence: 99%
“…A common transparent conducting electrode (TCE) material, Sn-doped In 2 O 3 (ITO) lms coated on polyethylene terephthalate (PET) substrates are typically employed as TFEs due to their low sheet resistance, high optical transmittance, well-known processing technology, and ease of use for large-area coatings. [8][9][10][11][12] However, sputtered ITO lms are critically limited as high-quality and cost-effective TFEs due to the relatively high sheet resistance and poor mechanical properties of ITO/PET lms as well as the high cost of indium. 13 Several TCE materials fabricated by vacuum-based or solution-based coating processes have been extensively reported as replacements for high-cost ITO lms.…”
Section: Introductionmentioning
confidence: 99%