Twist-driven wide freedom of indirect interlayer exciton emission in MoS2/WS2 heterobilayers

Tebyetekerwa, Mike; Zhang, Jian; Saji, Sandra Elizabeth; Wibowo, Ary Anggara; Rahman, Saidur; Truong, Thien N.; Lu, Yuerui; Yin, Zongyou; Macdonald, Daniel; Nguyen, Hieu T.

doi:10.1016/j.xcrp.2021.100509

Cited by 28 publications

(36 citation statements)

References 37 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…A novel degree of freedom unique to vdW HSs, the interlayer twist * tobias.korn@uni-rostock.de angle, plays an important role in governing ILE properties. Depending on the material system, changing the twist angle may tune the ILE emission energy [16,17] or control whether ILEs are optically bright [18]. Among the different material combinations, MoSe 2 -WSe 2 heterobilayers are among the most studied due to the large spectral separation between the ILE and the constituent monolayer exciton emission [14], the very long photoluminescence lifetimes at low temperatures [19,20], and the large, long-lived valley polarization that can be induced by either circularly polarized excitation [21] or applied magnetic fields [22].…”

Section: Introductionmentioning

confidence: 99%

Interlayer exciton valley polarization dynamics in large magnetic fields

et al. 2022

View full text Add to dashboard Cite

Section: Introductionmentioning

confidence: 99%

Interlayer exciton valley polarization dynamics in large magnetic fields

et al. 2022

View full text Add to dashboard Cite

“…The hBN layer in sample category (ii) isolates the HBL from gold-induced fluorescence quenching and serves as a protective layer that shields the HBL from structural damages or substrate-induced adsorbates -hence defect generation -during the stamping process onto nanopillars. Since the Γ valley features an out-of-plane orbital character, its orbital hybridization is sensitive to interlayer interactions (11,17,25,26). For this reason, we stacked MoS2/WSe2 heterostructures with near-zero or near-60 o twist angle with ±5 o error (unless otherwise specified) to achieve small layer separation (16) and strong interlayer interactions (27,28).…”

Section: Emission From Mos2-wse2 Heterostructuresmentioning

confidence: 99%

“…On the other hand, in certain heterobilayers such as MoS2/WSe2 and WS2/MoS2, strong interlayer hybridization at the Γ valley leads to Γ-K transition (Fig. 1B) with enhanced oscillator strength (11)(12)(13)(14)(15)(16)(17). However, bright PL emission is still hindered by its momentum-indirect nature.…”

Section: Introductionmentioning

confidence: 99%

Manipulating Interlayer Excitons for Ultra-pure Quantum Light Generation

Zhao

Zhu

et al. 2022

Preprint

View full text Add to dashboard Cite

Interlayer excitons (IXs) formed at the interface of two different atomically-thin semiconductors have been emerging as an exciting ground not only for exploring fascinating many-body phenomena such as exciton condensation,1-4 but also for realizing exciton-based information processing technologies.5, 6 In a parallel development, nanoscale strain engineering has emerged as an effective means for the localization of 2D intra-layer excitons and activation of defect states for quantum light generation.7-11 Exploring the intersection of these two exciting areas, where strain and defects are exploited for the manipulation of IX toward the emergence of new functionalities, is currently at a nascent stage.6 Here, using MoS2/WSe2 heterostructure as a model system, we demonstrate how strain, defects, and layering can be utilized as control knobs toward novel defect-bound IXs capable of bright, robust, and tunable quantum light emission in the technologically important near-infrared spectral range. More significantly, because the deep-level sulfur vacancy states isolate our quantum emitters (QEs) from any of the intra- and inter-layer excitons, we were able to achieve ultra-high single-photon purity with g(2)(0) = 0.01 meeting the critical milestone for quantum key distribution (QKD), logic gate and memory technologies.12 Our strategy of creating site-controlled QEs from the defect-bound IXs represents a paradigm shift in 2D quantum photonics research, from engineering intralayer exciton in monolayer structures towards IXs at the interface of 2D heterostructures.

show abstract

“…One encouraging platform is magnetic heterostructures based on the twist angle of stacking . Accurate control of the stacking angle between the constituent materials can lead to unusual and uncommon interface dynamics and phenomena.…”

Section: Outlook and Futurementioning

confidence: 99%

Recent Developments in van der Waals Antiferromagnetic 2D Materials: Synthesis, Characterization, and Device Implementation

et al. 2021

Self Cite

View full text Add to dashboard Cite

Magnetism in two dimensions is one of the most intriguing and alluring phenomena in condensed matter physics. Atomically thin 2D materials have emerged as a promising platform for exploring magnetic properties, leading to the development of essential technologies such as supercomputing and data storage. Arising from spin and charge dynamics in elementary particles, magnetism has also unraveled promising advances in spintronic devices and spin-dependent optoelectronics and photonics. Recently, antiferromagnetism in 2D materials has received extensive attention, leading to significant advances in their understanding and emerging applications; such materials have zero net magnetic moment yet are internally magnetic. Several theoretical and experimental approaches have been proposed to probe, characterize, and modulate the magnetic states efficiently in such systems. This Review presents the latest developments and current status for tuning the magnetic properties in distinct 2D van der Waals antiferromagnets. Various state-of-the-art optical techniques deployed to investigate magnetic textures and dynamics are discussed. Furthermore, device concepts based on antiferromagnetic spintronics are scrutinized. We conclude with remarks on related challenges and technological outlook in this rapidly expanding field.

show abstract

Twist-driven wide freedom of indirect interlayer exciton emission in MoS2/WS2 heterobilayers

Cited by 28 publications

References 37 publications

Interlayer exciton valley polarization dynamics in large magnetic fields

Interlayer exciton valley polarization dynamics in large magnetic fields

Manipulating Interlayer Excitons for Ultra-pure Quantum Light Generation

Recent Developments in van der Waals Antiferromagnetic 2D Materials: Synthesis, Characterization, and Device Implementation

Contact Info

Product

Resources

About