Twin-free InGaAs thin layer on Si by multi-step growth using micro-channel selective-area MOVPE

Deura, Momoko; Kondo, Yoshiyuki; Takenaka, Mitsuru; Takagi, Shinichi; Nakano, Yoshiaki; Sugiyama, Masakazu

doi:10.1016/j.jcrysgro.2009.12.005

Cited by 22 publications

(15 citation statements)

References 28 publications

(32 reference statements)

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“…[7][8][9][10] Heteroepitaxy remains one of the potentially feasible approaches for integration of III-Vs with Si, in which important progress has been made recently. 11 Nevertheless, many important aspects of the formation of extended defects remain to be understood; the formation of stacking faults for example has been attributed both to a formation of faults on {111} facets during early stages of island growth, 3 12 as well as by dissociation of perfect dislocations into partial dislocations.…”

Section: Materials Expressmentioning

confidence: 99%

Defect reduction in heteroepitaxial InP on Si by epitaxial lateral overgrowth

Junesand¹,

Gau²,

Sun³

et al. 2014

Mat Express

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Epitaxial lateral overgrowth of InP has been grown by hydride vapor phase epitaxy on Si substrates with a thin seed layer of InP masked with SiO 2 . Openings in the form of multiple parallel lines as well as mesh patterns from which growth occurred were etched in the SiO 2 mask and the effect of different growth conditions in terms of V/III ratio and growth temperature on defects such as threading dislocations and stacking faults in the grown layers was investigated. The samples were characterized by cathodoluminescence and by transmission electron microscopy. The results show that the cause for threading dislocations present in the overgrown layers is the formation of new dislocations, attributed to coalescence of merging growth fronts, possibly accompanied by the propagation of pre-existing dislocations through the mask openings. Stacking faults were also pre-existing in the seed layer and propagated to some extent, but the most important reason for stacking faults in the overgrown layers was concluded to be formation of new faults early during growth. The formation mechanism could not be unambiguously determined, but of several mechanisms considered, incorrect deposition due to distorted bonds along overgrowth island edges was found to be in best agreement with observations.

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Section: Materials Expressmentioning

confidence: 99%

Defect reduction in heteroepitaxial InP on Si by epitaxial lateral overgrowth

Junesand¹,

Gau²,

Sun³

et al. 2014

Mat Express

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“…We have previously employed time-modulation of P TMGa for obtaining better lateral growth [16], but it has been proven that no modulation of P TMGa is necessary if we employ the 1 mm windows and regular hexagonal prism of InAs as a basis of InGaAs growth. Most of the InGaAs islands had a slightly concave surface probably due to strain coming from in-plane modulation of Ga content, which will be improved by an appropriate modulation of P TMGa during the growth of InGaAs.…”

Section: Uniform Ingaas Micro-disksmentioning

confidence: 99%

“…We have already been successful in growing 200 nm-thick and 6 mm-wide InGaAs micro-disks on a Si(111) substrate, which is covered by SiO 2 mask with circular Si open areas (2 mm in diameter) for selective InGaAs growth [16]. The micro-disks are free from threading dislocations stemming from the latticemismatched interface [17].…”

Section: Introductionmentioning

confidence: 99%

“…This dramatic transition in growth direction is, we believe, due to selective incorporation of Ga atoms on { À 110} sidewalls rather than on (111) top surface. Accordingly, Ga atoms that are accumulated on the sidewalls induce nucleation and initiate the growth of InGaAs in the lateral direction, even though the { À 110} sidewalls are quite inactive for InAs growth as compared with the (111) top surface [16]. Subsequent lateral growth of InGaAs must proceed without initiating 3-dimensional growth and the exact partial pressure control of TMGa is essential: a high partial pressure is necessary to initiate lateral growth just after the growth of InAs, and then a moderate partial pressure is suitable for a steady lateral growth.…”

Section: Introductionmentioning

confidence: 99%

“…Subsequent lateral growth of InGaAs must proceed without initiating 3-dimensional growth and the exact partial pressure control of TMGa is essential: a high partial pressure is necessary to initiate lateral growth just after the growth of InAs, and then a moderate partial pressure is suitable for a steady lateral growth. On that basis, a flow-modulation growth sequence has been adopted to obtain enhanced lateral growth of InGaAs micro-disks [16].…”

Section: Introductionmentioning

confidence: 99%

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