2009
DOI: 10.1016/j.solmat.2008.02.037
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Twenty-two percent efficiency HIT solar cell

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Cited by 284 publications
(138 citation statements)
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“…However, they are expensive due to not only the cost of silicon wafers but also the high temperatures required to fabricate p-n junctions [1,2]. C-Si heterojunction solar cells with an intrinsic hydrogenated amorphous silicon (a-Si:H) thin-film (HIT) also have been extensively studied and have achieved a high efficiency of 22-23% [3,4]. In general, low-pressure plasmaenhanced chemical vapour deposition (PE-CVD) and sputtering techniques are used for the deposition of a-Si:H and transparent conductive oxide (TCO) layers.…”
mentioning
confidence: 99%
“…However, they are expensive due to not only the cost of silicon wafers but also the high temperatures required to fabricate p-n junctions [1,2]. C-Si heterojunction solar cells with an intrinsic hydrogenated amorphous silicon (a-Si:H) thin-film (HIT) also have been extensively studied and have achieved a high efficiency of 22-23% [3,4]. In general, low-pressure plasmaenhanced chemical vapour deposition (PE-CVD) and sputtering techniques are used for the deposition of a-Si:H and transparent conductive oxide (TCO) layers.…”
mentioning
confidence: 99%
“…Here we introduce the partitioned linear Fresnel lens design and manufacturing of lenses for medium-CPV modules using HIT (Hetero-junction intrinsic thin layer) silicon solar cells which we are now developing with > 20 % efficiency [5]. Similar linear Fresnel lens is reported elsewhere, but essentially different from ours [6].…”
Section: Introductionmentioning
confidence: 90%
“…When a direct-band-gap photoactive material (such as gallium-arsenide) is used, parasitic absorption impinges on the photon recycling process and reduces the achievable voltage output [1]; whereas when indirect-band-gap photoactive material (such as silicon) is used, this parasitic absorption impinges on the current density output [2][3][4][5]. In the case of thin-film silicon technology, parasitic absorption due to non-active layer has been identified as a major limitation for present devices [6,7].…”
Section: Introductionmentioning
confidence: 99%