Tunnelling-based ternary metal–oxide–semiconductor technology

Jeong, Jae Won; Choi, Young Eun; Kim, Woo Seok; Park, Jee Ho; Kim, Sunmean; Shin, Sunhae; Lee, Kyuho Jason; Chang, Jiwon; Kim, Seong‐Jin; Kim, Kyung Rok

doi:10.1038/s41928-019-0272-8

Cited by 88 publications

(48 citation statements)

References 35 publications

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“…3a. This logical signal reversal by light modulation exhibits some similar features to optical inversion devices [40][41][42][43] . When the thickness of the intermediate transport layer exceeds or approaches the effective built-in electric field length, the entire system can be split into two parts, as displayed in Fig.…”

Section: Resultsmentioning

confidence: 81%

Light-modulated vertical heterojunction phototransistors with distinct logical photocurrents

Han

Yang

et al. 2020

Light Sci Appl

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The intriguing carrier dynamics in graphene heterojunctions have stimulated great interest in modulating the optoelectronic features to realize high-performance photodetectors. However, for most phototransistors, the photoresponse characteristics are modulated with an electrical gate or a static field. In this paper, we demonstrate a graphene/C60/pentacene vertical phototransistor to tune both the photoresponse time and photocurrent based on light modulation. By exploiting the power-dependent multiple states of the photocurrent, remarkable logical photocurrent switching under infrared light modulation occurs in a thick C60 layer (11 nm) device, which implies competition of the photogenerated carriers between graphene/C60 and C60/pentacene. Meanwhile, we observe a complete positive-negative alternating process under continuous 405 nm irradiation. Furthermore, infrared light modulation of a thin C60 (5 nm) device results in a photoresponsivity improvement from 3425 A/W up to 7673 A/W, and we clearly probe the primary reason for the distinct modulation results between the 5 and 11 nm C60 devices. In addition, the tuneable bandwidth of the infrared response from 10 to 3 × 103 Hz under visible light modulation is explored. Such distinct types of optical modulation phenomena and logical photocurrent inversion characteristics pave the way for future tuneable logical photocurrent switching devices and high-performance phototransistors with vertical graphene heterojunction structures.

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Section: Resultsmentioning

confidence: 81%

Light-modulated vertical heterojunction phototransistors with distinct logical photocurrents

Han

Yang

et al. 2020

Light Sci Appl

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“…Particularly, neuromorphic systems on chips based on binary CMOS have been demonstrated by using parallelized neuro synaptic cores and spiking neural networks with low-frequency operations. Furthermore, for the significant increase of information density, the wafer-level integrated ternary CMOS (T-CMOS) using tunneling has been successfully reported and the possibility for the mass production of the T-CMOS neuromorphic system has been presented [27]. These ternary logics can reduce the number of transistors as compared to binary logics [28].…”

Section: Introductionmentioning

confidence: 99%

“…However, since the ternary state are implemented by the tunneling mechanism, the switching speed of the ternary inverters is relatively too slow compared to the conventional binary inverters. Nevertheless, the T-CMOS can operate a single comparator with two internal references in a 1.5 bit stage of a pipelined analogue-to-digital converter (ADC) [27]. As ADCs are necessary for integrated circuit designs, in the neuromorphic system which works at a low operating frequency (∼1kHz) [25], [26], it is expected that the ternary inverter can enhance the computation density as contrast to the binary inverter.…”

Section: Introductionmentioning

confidence: 99%

Low-Power Vertical Tunnel Field-Effect Transistor Ternary Inverter

Kim

Kwon

2021

IEEE J. Electron Devices Soc.

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In this study, vertical tunnel FET-based ternary CMOS (T-CMOS) is introduced and its electrical characteristics are investigated using TCAD device and mixed-mode simulations with experimentally calibrated tunneling parameters. This new T-CMOS utilizes two different types of tunneling currents to form three different output voltage states: (1) source-to-drain tunneling current; and (2) conventional source-to-channel tunneling current. To form a half supply voltage (V DD) output voltage during the inverter operation, the n-/p-type devices of the proposed T-CMOS are designed to have constant source-to-drain tunneling current regardless of gate voltage (V GS) by using nitride spacer between gate and drain. Also, typical binary inverter operation is performed using the source-to-channel tunneling. In voltage transfer characteristics (VTC), it is confirmed that there is the clear half V DD state after matching the tunneling currents of the n-/p-type devices. It is revealed that the stable half V DD state cannot be achievable if the currents are mismatched by gate workfunction, gate dielectric thickness, and interface trap variations, implying that the current matching between n-/p-type devices is crucial to obtain stable ternary operations. INDEX TERMS Band-to-band tunneling (BTBT), vertical tunnel field-effect transistor (vertical tunnel FET), ternary inverter, subthreshold swing (SS), ternary CMOS (T-CMOS), line tunneling.

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“…Specifically, the maximum noise margin of a ternary logic circuit is 33% of the VDD (VDD is divided by three logic states), while the maximum noise margin of a binary logic circuit is 50% of the VDD (VDD is divided by two logic states). 24 As a result, it is very important to accurately control each logic state margin circuit as the number of logic level states increases. However, previously reported vdW-H-based ternary circuits include: (1) incomplete output voltage swing [25][26][27] and (2) narrow margin for the intermediate-logic state.…”

Section: Introductionmentioning

confidence: 99%

Tunable Intermediate-Logic Ternary Circuits based on MoSe2-WSe2 Heterojunction

Hong¹,

Park²,

Cho³

et al. 2020

Preprint

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Van der Waals (vdW) heterojunctions, which consist of p-type and n-type semiconductors, have provided new features for transition metal dichalcogenides (TMDs). In this work, a negative differential transconductance (NDT) transistor based on a MoSe2-WSe2 heterojunction (MoSe2-WSe2 H-TR) is proposed. The MoSe2-WSe2 H-TR provides desirable device characteristics for ternary circuit operation with a switching behavior of off-state / p-type turn-on / NDT region / p-type turn-on. As a result, a 100% output voltage (VOUT) swing inverter can be achieved in a ternary inverter, which consists of the proposed MoSe2-WSe2 vdW-H-TR and a MoS2 floating-gate transistor. Furthermore, a tunable intermediate-logic ternary circuit operation is demonstrated by controlling the threshold voltage (VTH) in a pull-down n-type MoS2 floating-gate transistor. We also investigated that a light-induced operation on the MoSe2-WSe2 vdW-H-TR offers control of the VOUT amplitude at the intermediate-logic state. Based on the proposed MoSe2-WSe2 vdW-H-TR, this work suggests a strategy to obtain a tunable ternary circuit, thus providing a new concept of heterojunction electronics using layered TMDs.

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Tunnelling-based ternary metal–oxide–semiconductor technology

Cited by 88 publications

References 35 publications

Light-modulated vertical heterojunction phototransistors with distinct logical photocurrents

Light-modulated vertical heterojunction phototransistors with distinct logical photocurrents

Low-Power Vertical Tunnel Field-Effect Transistor Ternary Inverter

Tunable Intermediate-Logic Ternary Circuits based on MoSe2-WSe2 Heterojunction

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