Tunneling radiative recombination in p-n heterostructures based on gallium nitride and other AIIIBV semiconductor compounds

Kudryashov, V. E.; Yunovich, A. E.

doi:10.1134/1.1633958

Cited by 10 publications

(13 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…52 Furthermore, low energy emission band (1.9-2.7 eV) observed in nitride tunneling diodes was attributed to tunneling and found to be related to the high electric field strength. 49 Thus, under reverse bias, tunneling of the electrons occurs from pGaN to ZnO resulting in the appearance of holes in the pGaN. At the same time, the electron injection into p-GaN is expected to be more efficient than the injection of holes into ZnO, and consequently recombination would occur on the pGaN side of the junction.…”

Section: The Origin Of the Emission Peaksmentioning

confidence: 99%

“…Tunneling phenomena in III-nitride heterojunctions have been previously observed for different material combinations. [48][49][50][51] Furthermore, since the lattice mismatch between GaN and ZnO is higher than 1%, interface states are expected to significantly affect the current flow across the junction and severely limit the injection of the minority carriers. 52 Thus, significant current transport mechanisms in these devices are expected to involve tunneling and recombination at the interface, 52 and the tunneling likely involves the defect states at the interface, as illustrated in Fig.…”

Section: B Performance Under Reverse Biasmentioning

confidence: 99%

See 1 more Smart Citation

ZnO nanorod/GaN light-emitting diodes: The origin of yellow and violet emission bands under reverse and forward bias

Chen

Fang

et al. 2011

Journal of Applied Physics

View full text Add to dashboard Cite

Study of droop phenomena in InGaN-based blue and green light-emitting diodes by temperature-dependent electroluminescence Appl. Phys. Lett. 100, 153506 (2012) Silicon-nanocrystal resonant-cavity light emitting devices for color tailoring J. Appl. Phys. 111, 074512 (2012) Effects of energetic disorder on the low-frequency differential capacitance of organic light emitting diodes J. Appl. Phys. 111, 074506 (2012) Probing the electrode-polymer interface in conjugated polymer devices with surface-enhanced Raman scattering Appl. Phys. Lett. 100, 141907 (2012) Low-cost caesium phosphate as n-dopant for organic light-emitting diodes J. Appl. Phys. 111, 074502 (2012) Additional information on J. Appl. Phys. ZnO nanorods have been prepared by electrodeposition under identical conditions on various p-GaN-based thin film structures. The devices exhibited lighting up under both forward and reverse biases, but the turn-on voltage and the emission color were strongly dependent on the p-GaN-based structure used. The origin of different luminescence peaks under forward and reverse bias has been studied by comparing the devices with and without ZnO and by photoluminescence and cathodoluminescence spectroscopy. We found that both yellow-orange emission under reverse bias and violet emission under forward bias, which are commonly attributed to ZnO, actually originate from the p-GaN substrate and/or surface/interface defects. While the absolute brightness of devices without InGaN multiple quantum wells was low, high brightness with luminance exceeding 10 000 cd/m 2 and tunable emission (from orange at 2.1 V to blue at 2.7 V, with nearly white emission with Commission internationale de l'éclairage (CIE) coordinates (0.30, 0.31) achieved at 2.5 V) was obtained for different devices containing InGaN multiple quantum wells.

show abstract

Section: The Origin Of the Emission Peaksmentioning

confidence: 99%

Section: B Performance Under Reverse Biasmentioning

confidence: 99%

ZnO nanorod/GaN light-emitting diodes: The origin of yellow and violet emission bands under reverse and forward bias

Chen

Fang

et al. 2011

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…According to our study we concluded that this 600 nm emission at low currents was caused by tunneling radiative recombination process and appeared only in some local LED areas at low forward bias. Kudryashov et al have used [3,4] the model of diagonal tunneling [6][7][8] for description of similar long wavelength peaks in emission spectra for GaN based green and blue LEDs at low currents. We assume that local red emission in our green LEDs can be attributed to the similar diagonal tunneling process.…”

Section: Methodsmentioning

confidence: 99%

“…Degradation in I-V characteristics was attributed to the tunneling process [1,2]. The spectra of tunneling emission in blue and green LEDs under low current regime were intensively investigated [2][3][4]. In our work, we used the confocal microscopy to study the distribution and spectral properties of local tunneling recombination emission (~600 nm) in green LEDs under low current regime.…”

mentioning

confidence: 98%

Investigation of local tunneling phenomena in green InGaN‐based LEDs

Onushkin

Lee

Yang

et al. 2007

Phys. Status Solidi (c)

View full text Add to dashboard Cite

The tunneling radiative recombination in green InGaN based Light Emitting Diodes (LEDs) has been studied by micro-Electroluminescence measurements. It was found that this recombination was very local, which has lateral size less than 1 µm and spectral peak position around 600 nm. Changes of growth conditions led to a reduction in the concentration of these defects, improving the current-voltage characteristics and slightly enhancing the optical efficiency of green LEDs.1 Introduction GaN-based light emitting diodes (LEDs) operating in the range of green-to-violet are commercially available and have received much attention. The GaN-based LEDs were usually grown on sapphire substrates and had high density of different defects, especially dislocations. However, it was noted that the high external quantum efficiency was achieved for blue and violet LEDs. Generally, the optical efficiency of green LEDs is lower than that of blue LEDs. Moreover, the current voltage (I-V) characteristics, for example, the ideality factors for green LEDs are usually higher than those for blue LEDs especially at low current regime. Degradation in I-V characteristics was attributed to the tunneling process [1,2]. The spectra of tunneling emission in blue and green LEDs under low current regime were intensively investigated [2][3][4]. In our work, we used the confocal microscopy to study the distribution and spectral properties of local tunneling recombination emission (~600 nm) in green LEDs under low current regime.

show abstract

“…3,4 As a result, the population of different QWs in the active region is strongly inhomogeneous with p-side QW dominating the optical emission. 7,8 In LD structures, the under-pumped QWs add their interband absorption to the a͒ Author to whom correspondence should be addressed. Carrier accumulation pockets around EBL can also lead to excessive carrier leakage due to the tunnel-recombination process.…”

Section: Introductionmentioning

confidence: 99%

Modeling of injection characteristics of polar and nonpolar III-nitride multiple quantum well structures

Kisin¹,

El-Ghoroury²

2010

Journal of Applied Physics

View full text Add to dashboard Cite

Articles you may be interested inDetermination of the composition and thickness of semi-polar and non-polar III-nitride films and quantum wells using X-ray scattering Carrier recombination mechanisms in nitride single quantum well light-emitting diodes revealed by photo-and electroluminescence J. Appl. Phys.Carrier confinement and injection characteristics of polar and nonpolar III-nitride quantum well ͑QW͒ light-emitting diode or laser diode structures are compared. We demonstrate that strongly inhomogeneous QW injection in multiple-QW ͑MQW͒ active region is one of the possible reasons holding back the advance of nonpolar laser structures. In polar structures, strong interface polarization charges induce the nonuniform carrier distribution among the active QWs so that the extreme p-side QW always dominates the optical emission. On the contrary, in nonpolar MQW structures, the inhomogeneity of QW populations is supported mainly by QW residual charges and the prevailing QW is the one closest to the n-side of the diode. For both polar and nonpolar structures, the QW injection inhomogeneity is strongly affected by the QW carrier confinement and becomes more pronounced in longer wavelength emitters with deeper active QWs. We show that in nonpolar structures indium incorporation into optical waveguide layers improves the uniformity of QW injection. On the contrary, QW injection in polar structures remains inhomogeneous even at high-indium waveguide layer compositions. We show, however, that polarization-matched design of the electron-blocking layer can noticeably improve the injection uniformity in polar MQW structure and enhance the structure internal quantum efficiency.

show abstract

Tunneling radiative recombination in p-n heterostructures based on gallium nitride and other AIIIBV semiconductor compounds

Cited by 10 publications

References 9 publications

ZnO nanorod/GaN light-emitting diodes: The origin of yellow and violet emission bands under reverse and forward bias

ZnO nanorod/GaN light-emitting diodes: The origin of yellow and violet emission bands under reverse and forward bias

Investigation of local tunneling phenomena in green InGaN‐based LEDs

Modeling of injection characteristics of polar and nonpolar III-nitride multiple quantum well structures

Contact Info

Product

Resources

About