Tunneling Properties of the Charge Carriers through Sub-2-nm-Thick Oxide in 
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Ko, Eunjung; Liu, Kai; Hwang, Cheol Seong; Choi, Hyoung Joon; Choi, Jung Chan

doi:10.1103/physrevapplied.11.034016

Cited by 3 publications

(2 citation statements)

References 30 publications

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“…The SA and SC structures have a 2 a Si × 2 a Si supercell as its in-plane dimension. The lowest energy structure was produced by relaxing the supercell size along the z-axis, the atoms inside silica, and two Si layers near the interface, according to our earlier study on Ge/a-GeO 2 /Ge structures [29]. Consequently, this relaxation strategy is employed to generate all the systems in this study until all atomic forces are less than 0.05 eV −1 .…”

Section: Methodsmentioning

confidence: 99%

“…The quantum-leakage-tunneling-current density per unit area, J QLT , is the leakage-current density caused by the quantum-mechanically tunneling wave functions passing through the ultrathin oxide barrier, even without the externally applied voltage. J QLT for electrons, J e , and holes, J h , can be estimated using tunneling spectra assuming electron (n e ) and hole concentrations (n h ) [29]. Since tunneling spectra are integrated mostly along the Si band-edge boundaries to estimate J QLT , tunneling spectra near VBM Si or CBM Si are the most essential.…”

Section: Quantum-leakage-tunneling Propertiesmentioning

confidence: 99%

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Comparison of interfaces, band alignments, and tunneling currents between crystalline and amorphous silica in Si/SiO₂/Si structures

Choi

2022

Mater. Res. Express

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Recently, to improve the performance of an integrated metal-oxide-semiconductor (MOS) device, an attempt has been made in the industry to replace the amorphous oxide with a crystalline oxide. However, various characteristics caused by the difference between amorphous and crystalline oxide in the MOS structure have not been systematically investigated. Therefore, we demonstrate the difference in atomic interface structures, electronic structures, and tunneling properties concerning varied oxide phases in a representative system, Si/SiO2/Si structures, with sub-3 nm-thick silica from first-principles. We investigate two oxide phases of amorphous (a-) and crystalline (c-) SiO2 with and without H passivation at the interface. Si/a-SiO2 exhibits a smooth interface layer, whereas Si/c-SiO2 exhibits an abrupt interface layer, resulting in the thicker interface layer of Si/a-SiO2 than Si/c-SiO2. Thus for a given total silica thickness, the adequate tunneling-blocking thickness, where all the Si atoms form four Si-O bonds, is thinner in a-SiO2 than c-SiO2, originating more tunneling current through a-SiO2 than c-SiO2. However, the effects of dangling bonds at Si/c-SiO2 rather than Si/a-SiO2 on tunneling currents are crucial, particularly in valence bands. Furthermore, when the dangling bonds are excluded by H atoms at Si/c-SiO2, the tunneling current dramatically reduces, whereas the H-passivation effect on the tunneling blocking at Si/a-SiO2 is insignificant. Our study contributes systematic knowledge regarding oxide phases and interfaces to promote for high performance of MOS devices.

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Section: Methodsmentioning

confidence: 99%

Section: Quantum-leakage-tunneling Propertiesmentioning

confidence: 99%

Comparison of interfaces, band alignments, and tunneling currents between crystalline and amorphous silica in Si/SiO₂/Si structures

Choi

2022

Mater. Res. Express

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Effects of interface atomic rearrangement on band alignments in Ge/a-Al2O3/Au heterostructures from first-principles

Choi

2022

Applied Surface Science

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Controlled generation of soliton spectral tunneling by double pulses injection

Yang

Luo

et al. 2022

Opt. Express

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Numerical simulations of a simple and direct method to generate soliton spectral tunneling (SST) based on two input pulses are reported in the paper. An intense pump pulse and a weak probe pulse with a time delay are transmitted in a photonic crystal fiber with three zero-dispersion wavelengths. Our results demonstrate that the distance and the state of soliton tunneling are obviously influenced by the probe-pump delay. Therefore, the velocity and efficiency of SST can be effectively regulated by varying the relative time delay, thus affecting the SST formation. This scenario appears promising for designing a “soliton ejector”, in which real-time control of the soliton ejection process can be achieved through phase modulation between pulses.

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Tunneling Properties of the Charge Carriers through Sub-2-nm-Thick Oxide in Ge/a - GeO2/Ge

Cited by 3 publications

References 30 publications

Comparison of interfaces, band alignments, and tunneling currents between crystalline and amorphous silica in Si/SiO₂/Si structures

Comparison of interfaces, band alignments, and tunneling currents between crystalline and amorphous silica in Si/SiO₂/Si structures

Effects of interface atomic rearrangement on band alignments in Ge/a-Al2O3/Au heterostructures from first-principles

Controlled generation of soliton spectral tunneling by double pulses injection

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Tunneling Properties of the Charge Carriers through Sub-2-nm-Thick Oxide in Ge/a - GeO2/Ge

Cited by 3 publications

References 30 publications

Comparison of interfaces, band alignments, and tunneling currents between crystalline and amorphous silica in Si/SiO2/Si structures

Comparison of interfaces, band alignments, and tunneling currents between crystalline and amorphous silica in Si/SiO2/Si structures

Effects of interface atomic rearrangement on band alignments in Ge/a-Al2O3/Au heterostructures from first-principles

Controlled generation of soliton spectral tunneling by double pulses injection

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Product

Resources

About

Comparison of interfaces, band alignments, and tunneling currents between crystalline and amorphous silica in Si/SiO₂/Si structures

Comparison of interfaces, band alignments, and tunneling currents between crystalline and amorphous silica in Si/SiO₂/Si structures