Tunneling of electrons from Si into thermally grown SiO2

Discharge mechanisms modeling in LPCVD silicon nanocrystals usingC–Vand capacitance transient techniques†

“…A simplified version of the quantum-subband Weinberg model [10,11], based on electrons confined within the lowest subband in the quantum dot, is introduced in the direct tunnel expression of the conduction band electron current. To this end, we take:…”

Kinetic Monte Carlo of transport processes in Al/AlOx/Au-layers: Impact of defects

“…Moreover, our barrier height must only be increased by ∼0.15 eV to obtain the "effective" value from experiments, as stated already by Weinberg earlier. 29 45 and the plasma process is likely to form an amorphous oxide. Another possible explanation would be the forming of alumina polymorphs, including several phases of Al 2 O 3 , which exhibit also several energies for the dominant V O or Al i , as cited above.…”

“…This might cause the present approximation with respect to the Coulomb potential not to be valid anymore. Moreover, also the image potential for tunneling electrons can be omitted in the first approximation, as was discussed by Weinberg 29,30 and Schenk. 31 They came to the conclusion that it is negligible to include it for electrons tunneling through a barrier which is several 0.1 eV high.…”

Tight-binding investigation of electron tunneling through ultrathin SiO2gate oxides

“…The EM viewpoint is illustrated schematically in However, little if any orientation dependence is found experimentally in the barrier to tunneling [4,[12][13][14], suggesting a strong k -breaking interaction across the interface. To date, this apparent lack of k conservation has been ascribed to disorder in the oxide, interface roughness [4,15], and phonon scattering [15].…”