Kinetic Monte Carlo of transport processes in Al/AlO<i>x</i>/Au-layers: Impact of defects

Weiler, Benedikt; Haeberle, Tobias; Gagliardi, Alessio; Lugli, Paolo

doi:10.1063/1.4963180

Cited by 6 publications

(2 citation statements)

References 44 publications

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“…Note that the average energy of the charge traps located near the anode is lower since the electrons are attracted to the anode. At charging voltages exceeding Vth electrons can tunnel into localized trap sites with the energy below the Fermi level, i.e., only those which are located close to the anode [31,32] (Figure 5(b)). Thus, the field emission effect produces a strongly nonuniform distribution: More charges are injected into the region near the anode while the region near the cathode is completely depleted of extra electrons since the electrons cannot tunnel in the traps in that region, since the energy of such traps is higher.…”

Section: Discussionmentioning

confidence: 99%

Giant energy storage effect in nanolayer capacitors charged by the field emission tunneling

Ilin¹,

Burkova²,

Colla³

et al. 2021

Nanotechnology

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We fabricate nanolayer alumina capacitor and apply high electric fields, close to 1 GV m−1, to inject charges in the dielectric. Asymmetric charge distributions have been achieved due to the selectivity of the quantum tunneling process. Namely, the electrons near the Fermi level cannot tunnel intoregions near the cathode, where the total energy would be less than the potential energy. This mechanism exhibits a strong tendency to populate charge traps located near the anode, i.e. the regions where their potential energy is the lowest. Such spatially selective charging of the dielectric allows a permanent bulk charge storage in the dielectric layer, even if the capacitor plates are short-circuited, provided that the temperature is sufficiently low so that the conductivity of the dielectric is negligible. The stored charge can be recovered if the temperature is increased above ~250 K for the dielectric tested, i.e. Al2O3. In our experiments, the total charge stored in the dielectric was up to seven and a half times higher than the charge stored on the capacitor plates. Also, measurements of the breakdown voltage show that the breakdown electric field, i.e. the dielectric strength, is independent of the thickness of the dielectric.

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Section: Discussionmentioning

confidence: 99%

Giant energy storage effect in nanolayer capacitors charged by the field emission tunneling

Ilin¹,

Burkova²,

Colla³

et al. 2021

Nanotechnology

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“…The electrode-limited conduction mechanism, widely applied in metal/insulator/metal (MIM) devices, depends on the electrical properties at the electrode and dielectric contact. The key parameters in this mechanism are the barrier height at the electrode and dielectric interface as well as the effective mass of the conducting carrier in the dielectric film. − Therefore, the thickness of the insulating film in this device is inevitably limited to a few nanometers, and because the charge carriers instantaneously move to the opposite electrode because of the quantum tunnel effect, it is difficult to control the direction and the magnitude of the current. − …”

Section: Introductionmentioning

confidence: 99%

Investigation of Vertical Current Phenomena in the Insulator/Oxide Semiconductor Heterojunction Using XPS Analysis and an Atmospheric-Pressure Plasma Treatment System

Cho

Park

Lee

et al. 2019

ACS Appl. Electron. Mater.

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Transferring charge carriers through an insulator film between two metal electrodes is a major issue in various electronic devices, including metal/insulator/metal (MIM) diodes and resistive switching memories. Recently, a concept has been proposed that can unidirectionally control the direction and magnitude of the vertical current in a metal/ insulator/oxide semiconductor/metal (MIOSM) structure by utilizing a bulk-limited conduction mechanism, which depends on the trap and subgap states in the insulator. This shows the potential to expand the processing window of conventional electronic devices, which follow the electrode-limited conduction mechanism, but is still insufficient to provide direct evidence that the flow of the electrical current in the MIOSM structure is due to the bulk-limited conduction within the insulator. In this study, we fabricated P ++ Si/AlO x /Al (MIM) and P ++ Si/AlO x /a-IGZO/Al (MIOSM) thin film diodes using a solution-processed aluminum oxide as an insulator layer, which has relatively rich subgap states. After the AlO x thin film was fabricated, atmospheric-pressure plasma (APP) treatment was performed for different times on the AlO x thin film. Through XPS analysis of AlO x , we confirmed the correlation between the atmospheric plasma treatment time on the insulator, and the defect state was thereby controlled. Furthermore, we observed that this correlation directly affects the I−V curves of MIM and MIOSM diodes. These results provide a clue for employing an approach of the current flow through an insulating film to applications such as rectifiers, switching devices, amplifiers, and oxide thin film diodes.

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Coulomb barrier creation by means of electronic field emission in nanolayer capacitors

et al. 2020

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Kinetic Monte Carlo of transport processes in Al/AlOx/Au-layers: Impact of defects

Cited by 6 publications

References 44 publications

Giant energy storage effect in nanolayer capacitors charged by the field emission tunneling

Giant energy storage effect in nanolayer capacitors charged by the field emission tunneling

Investigation of Vertical Current Phenomena in the Insulator/Oxide Semiconductor Heterojunction Using XPS Analysis and an Atmospheric-Pressure Plasma Treatment System

Coulomb barrier creation by means of electronic field emission in nanolayer capacitors

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