A set of phenomena involving the self-trapped hole (STH) in AgCl have been
studied in crystals doped with hole sources, traps for holes and electrons and
providers of cation vacancies. An energy barrier was demonstrated in the
self-trapping process; its energy was related to appropriate phonon energies,
and tunnelling appeared in the temperature range predicted by Mott and
Stoneham. Migration of the STH can occur either by phonon-assisted hopping or
by tunnelling. From the temperature dependences, one obtains the activation
energy (0.062 eV), the trap depth (0.12 eV) and the temperature exponent for
quantum migration (1.3). The structures and energetics of two centres
involving an STH bound to a vacancy have been deduced. Also, it was shown
that low-temperature capture of a hole by substitutional Fe2+
causes production of a Frenkel pair, as well as ultimately leading to
formation of the (interstitial Fe3+) - (multivacancy) defect that
was first characterized by Hayes et al.