Tunneling Magnetoresistance Properties in Ballistic Spin Field-Effect Transistors

Silicon spintronics: Progress and challenges

“…A simple analytical expression for the magnetoresistance can be obtained for a quasi-ballistic one-dimensional SpinFET [125,126]. The effective Hamiltonian in the ferromagnetic regions has the following form in the one-band effective mass approximationĤ…”

“…For the one-dimensional semiconductor channel region the Hamiltonian has been formulated in [125][126][127]. The spin-orbit coupling for silicon is taken in the form (54).…”

“…To facilitate the injection of the spin-polarized current into the channel, one has to introduce, following [125] and [126], tunnel barriers at the interfaces between the contacts and the channel with the dimensionless strength…”

Ballistic Transport Properties of Spin Field-Effect Transistors Built on Silicon and InAs Fins

“…To calculate the transport properties of the ballistic spin field-effect transistor we consider a model similar to (12) and (13). The Hamiltonian in the ferromagnetic regions has the following form in the one-band effective mass approximation: , 0 , 2…”

“…where m * f is the effective mass in the contacts, h 0 =2PE F /(P 2 +1) is the exchange splitting energy with P defined as the spin polarization in the ferromagnetic regions, E F is the Fermi energy, and ı z is the Pauli matrix; ± in [5] stands for the parallel and anti-parallel configuration of the contact magnetization. For the semiconductor region the Hamiltonian reads ( 12), (13) , 2…”