Tunneling effects in short period strained AlN/GaN superlattices

Valcheva, E.; Kirilov, K.; Ḿonemar, B.; Amano, Hiroshi; Akasaki, Isamu

doi:10.1002/pssc.200880880

Cited by 4 publications

(1 citation statement)

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“…The calculations and the results we present here are inspired by the sample provided in [5] and are based on a previously presented model [6]. We use the effective mass approximation and the transfer matrix formalism.…”

Section: Introductionmentioning

confidence: 99%

Polarization dependence of III-nitride superlattice transmission coefficient

Asenova¹,

Valcheva

2012

J. Phys.: Conf. Ser.

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Current density in generalized Fibonacci superlattices under a uniform electricfield P Panchadhyayee, R Biswas, Arif Khan et al.-A theoretical resonant-tunnelling approach to electric-field effects in quasiperiodic Fibonacci GaAs-(Ga,Al)As semiconductor superlattices E Reyes-Gómez, C A Perdomo-Leiva, L E Oliveira et al. Abstract. We study the tunnelling process and behaviour of the transmission coefficient of an AlN/GaN superlattice as the internal polarizations in the composing layers change. Our calculations are based on the transfer matrix formalism and the exact solution of the Schrödinger's equation provided by the Airy functions. We also examine the dependence between the minizones width and the magnitude of the internal polarizations both for unbiased and biased structure. IntroductionAccording to the recent researches [1], the III-nitride layered heterostructures have shown promising features for the manufacturing of devices for the optical communication region, high electron mobility transistors, ultra-violet lasers and resonant tunneling based structures for THz applications [1,2,3]. It has also bee shown that the internal piezo-and pyroelectric polarizations of the wurtzite modification have a significant effect upon the electronic properties of the barrier structures [4].The calculations and the results we present here are inspired by the sample provided in [5] and are based on a previously presented model [6]. We use the effective mass approximation and the transfer matrix formalism. Our purpose is to demonstrate the behaviour of the transmission coefficient and the minizones in the conduction band for a ten-period wurtzite AlN/GaN superlattice in and out of the presence of external homogeneous electric field, while theoretically modifying the actual magnitudes of the polarizations in the layers. To assure a desired accuracy, we use the Airy function formalism when solving the one-dimensional Schrödinger's equation for the superlattice potential [7].

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Section: Introductionmentioning

confidence: 99%