Tunneling-based rectification and photoresponsivity in black phosphorus/hexagonal boron nitride/rhenium diselenide van der Waals heterojunction diode

Abstract

The BP/h-BN/ReSe2 heterostructure demonstrates the highest tunneling-based rectification ratio and responsivity. The tunneling device operates in switching operation at up to GHz frequency.

Highly Sensitive, Ultrafast, and Broadband Photo‐Detecting Field‐Effect Transistor with Transition‐Metal Dichalcogenide van der Waals Heterostructures of MoTe2 and PdSe2

“…It should be noted that the observed rise and decay times of the MoTe 2 /PdSe 2 vdWH FET are one order of magnitude faster than those of other TMD‐based heterostructure devices reported previously. [ 11,23a,37 ]…”

A comparative study of electrical and opto-electrical properties of a few-layer p-WSe2/n-WS2 heterojunction diode on SiO2 and h-BN substrates

“…This limiting effect was conrmed aer the achievement of a high diode RR with an ohmic metal/TMD interface and a much reduced SBH. 51 As another factor, the sharpness of the interface between the TMDs at the junction is still under debate. 32,52 Generally most of the diode characteristics have been studied in a lateral-vertical vdW heterojunction structure, where lateral channels are also present in addition to the heterojunction.…”

High performance and gate-controlled GeSe/HfS2 negative differential resistance device

“…The nano devices based on 2D-TMDs vdWHs have been efficiently used in FETs, 28 sensors, 29 data storage devices, 30 photodetectors, [31][32][33][34] integrated circuits, 35 energy storage, 36 ampliers, 37 inverters, 38 spin-eld effect transistors, 39 water splitting, 40 and diodes. 38,41 Heterostructures and homojunction type devices have been designed by the doping of TMDs materials (chemically and electrostatically), and Fermi-level pinning. These techniques are not suitable for use in a high-performance device.…”

“…Secondly, the performance of the TMDs based nano devices is also controlled by controlling the Schottky barrier height (f B ) of the metal-TMDs junction. 38,42 The f B is considered to be a key parameter to control the performance of nano devices.…”