Tunneling anisotropic magnetoresistance driven by magnetic phase transition

Chen, X. Z.; Feng, J. F.; Wang, Z. C.; Zhang, J.; Zhong, Xiaoyan; Song, Cheng; Jin, Lei; Zhang, B.; Li, F.; Jiang, Miao; Tan, Yiwei; Zhou, Xiaofeng; Shi, Guangyuan; Han, Xiao; Mao, Shengcheng; Chen, Y. H.; Han, X. F.; Pan, Feng

doi:10.1038/s41467-017-00290-4

Cited by 57 publications

(48 citation statements)

References 35 publications

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“…As shown in Fig.3 (b), after the insertion, the transmission of GAFM-FeRh/MgO/Cu has been drastically suppressed and results in a significant drop of MPT-TMR to 16% (see Table 1 for details). The MPT-TMR now is qualitatively comparable with experimental value in '-FeRh/γ-FeRh/MgO/γ-FeRh tunnel junction [26]. This proves that the direct interface contact of '-FeRh with MgO barrier is essential for achieving giant MPT-TMR.…”

Section: ⅱ Calculation Methodssupporting

confidence: 79%

“…However, different from Fe/MgO/Fe MTJs where the lattice mismatch is as high as 4%, the lattice mismatch between '-FeRh and MgO is quite small and less than 1%. This suggests that the proposed '-FeRh/MgO/Cu junction may have better epitaxial quality which is confirmed by recent experiments [26]. Nevertheless, below we will briefly discuss the effect of some structural disorder especially the interface imperfection on MPT-TMR.…”

Section: ⅱ Calculation Methodssupporting

confidence: 73%

“…Despite of the fact that from previous theoretical calculations [25], the ground magnetic phase of '-FeRh is ferromagnetic with Rh termination and GAFM with Fe termination in FeRh/MgO interface. However, experiments always indicate that the magnetic order in '-FeRh/MgO interface is GAFM [26]. This suggests the Rh termination interface may not be a favorable interface compared with Fe termination interface.…”

Section: ⅱ Calculation Methodsmentioning

confidence: 99%

“…The MPT-TMR can be hundreds of percent which is much larger than TAMR [11][12][13][14][15] and comparable with TMR in Fe/MgO/Fe-MTTs [3][4][5][6][7][8]. This huge MPT-TMR in '-FeRh/MgO/Cu make this tunnel junction structure promising for device application at room temperature [26]. Please note that the MPT-TMR for 5ML-MgO is +918% which is slightly smaller than the theoretical value reported +1161% in reference [26].…”

Section: ⅱ Calculation Methodsmentioning

confidence: 99%

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Giant Tunnel Magnetoresistance with a Single Magnetic Phase-Transition Electrode

et al. 2018

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Magnetic phase transition tunneling magnetoresistance (MPT-TMR) effect with a single magnetic electrode has been investigated by first-principles calculations. The calculations show that the MPT-TMR of '-FeRh/MgO/Cu tunnel junction can be as high as hundreds of percent when the magnetic structure of '-FeRh changes from G-type antiferromagnetic (GAFM) to ferromagnetic order. This new type of MPT-TMR may be superior to the tunneling anisotropic magnetoresistance because of its huge magneto-resistance effect and similar structural simplicity. The main mechanism for the giant MPT-TMR can be attributed to the formation of interface resonant states at GAFM-FeRh/MgO interface. A direct FeRh/MgO interface is found to be necessary for achieving high MPT-TMR experimentally. Moreover, we find the '-FeRh/MgO interface with FeRh in ferromagnetic phase has nearly full spin-polarization due to the negligible majority transmission and significantly different Fermi surface of two spin channels. Thus, it may act as a highly efficient and tunable spin-injector. In addition, electric field driven MPT of FeRh-based hetero-magnetic nanostructures can be utilized to design various energy efficient tunnel junction structures and the corresponding lower power consumption devices. We also discuss the consequence of various junction defects on MPT-TMR. The interface oxygen layer is found to be detrimental to MPT-TMR. The sign of MPT-TMR is reversal with Rh termination due to the lack of contribution from interface resonance states. However, the MPT-TMR may be robust against the oxygen vacancy inside of MgO and the shift of Fermi energy. Our results will stimulate further experimental investigations of MPT-TMR and other fascinating phenomenon of FeRh-based tunnel junctions that may be promising in antiferromagnetic spintronics.

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Section: ⅱ Calculation Methodssupporting

confidence: 79%

Section: ⅱ Calculation Methodssupporting

confidence: 73%

Section: ⅱ Calculation Methodsmentioning

confidence: 99%

Section: ⅱ Calculation Methodsmentioning

confidence: 99%

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Giant Tunnel Magnetoresistance with a Single Magnetic Phase-Transition Electrode

et al. 2018

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“…More interesting is the idea that triplet superconductivity in FM UGe 2 is related to coupled CDW-ISDW fluctuations that emerge with pressure within the FM phase 31 . Because the unusual transition between ISDW and FM states in Fe 3 Ga 4 occurs just above room temperature, it has been suggested as a possible material for a magnetic tunneling junction device 32 . This suggestion takes advantage of the ability to drive a phase transition between the ISDW and spin-polarized phases with moderately sized magnetic fields and the ability to tune the phase transition temperature via pressure and disorder.…”

Section: Discussionmentioning

confidence: 99%

Spin density wave instability in a ferromagnet

Ning

Cao

et al. 2018

Sci Rep

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Due to its cooperative nature, magnetic ordering involves a complex interplay between spin, charge, and lattice degrees of freedom, which can lead to strong competition between magnetic states. Binary Fe3Ga4 is one such material that exhibits competing orders having a ferromagnetic (FM) ground state, an antiferromagnetic (AFM) behavior at intermediate temperatures, and a conspicuous re-entrance of the FM state at high temperature. Through a combination of neutron diffraction experiments and simulations, we have discovered that the AFM state is an incommensurate spin-density wave (ISDW) ordering generated by nesting in the spin polarized Fermi surface. These two magnetic states, FM and ISDW, are seldom observed in the same material without application of a polarizing magnetic field. To date, this unusual mechanism has never been observed and its elemental origins could have far reaching implications in many other magnetic systems that contain strong competition between these types of magnetic order. Furthermore, the competition between magnetic states results in a susceptibility to external perturbations allowing the magnetic transitions in Fe3Ga4 to be controlled via temperature, magnetic field, disorder, and pressure. Thus, Fe3Ga4 has potential for application in novel magnetic memory devices, such as the magnetic components of tunneling magnetoresistance spintronics devices.

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Antiferromagnetic Materials and Their Manipulations

Liu

Wang

2022

Spintronics

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Tunneling anisotropic magnetoresistance driven by magnetic phase transition

Cited by 57 publications

References 35 publications

Giant Tunnel Magnetoresistance with a Single Magnetic Phase-Transition Electrode

Giant Tunnel Magnetoresistance with a Single Magnetic Phase-Transition Electrode

Spin density wave instability in a ferromagnet

Antiferromagnetic Materials and Their Manipulations

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