Tuning the wetting layer in the InGaAs/AlGaAs quantum dots

Gurioli, Massimo; Testa, S; Altieri, P.; Sanguinetti, S.; Grilli, E.; Guzzi, M.; Trevisi, Giovanna; Frigeri, P.; Franchi, S.

doi:10.1016/s1386-9477(02)00708-7

Cited by 6 publications

(4 citation statements)

References 6 publications

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“…Growth temperature and thickness for each layer are shown in figure 1. The insertion of Al in the QD confining layer is a well known design strategy which provides, for a constant lattice mismatch, wider band discontinuities to confine carriers in QDs, leading to higher transition energies and emission efficiencies at room temperature [24].…”

Section: Experimental Set-upmentioning

confidence: 99%

Critical strain region evaluation of self-assembled semiconductor quantum dots

et al. 2007

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A novel peak finding method to map the strain from high resolution transmission electron micrographs, known as the Peak Pairs method, has been applied to In(Ga)As/AlGaAs quantum dot (QD) samples, which present stacking faults emerging from the QD edges. Moreover, strain distribution has been simulated by the finite element method applying the elastic theory on a 3D QD model. The agreement existing between determined and simulated strain values reveals that these techniques are consistent enough to qualitatively characterize the strain distribution of nanostructured materials. The correct application of both methods allows the localization of critical strain zones in semiconductor QDs, predicting the nucleation of defects, and being a very useful tool for the design of semiconductor devices.

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Section: Experimental Set-upmentioning

confidence: 99%

Critical strain region evaluation of self-assembled semiconductor quantum dots

et al. 2007

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“…Deposition of underlying layer before QDs layer is believed to have strong effects on the formation of wetting layer followed by QDs formation. Several studies on the effect of underlying layer on InGaAs QDs were previously carried out using InGaAlAs [2] and AlGaAs [3,4] as the underlying layer. These studies show that the QDs interconnection via the underlying layer has strong influence on the structural and optical properties of In x Ga 1-x As/GaAs or InAs/GaAs QDs.…”

Section: Introductionmentioning

confidence: 99%

Influence of InxGa1-xAs Underlying Layer on the Structural of the In0.5Ga0.5As Quantum Dots Grown by MOCVD

Aryanto¹,

Othaman²,

Ismail³

et al. 2014

Mal. J. Fund. Appl. Sci.

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The single layer In0.5Ga0.5As quantum dots (QDs) were grown on a thin InxGa1-xAs underlying layer by metal-organic chemical vapor deposition(MOCVD) via Stranski-Krastanow growth mode. The effect of different indium composition in the InxGa1-xAs underlying layer was investigated usingatomic force microscopy (AFM). AFM images show that the QDs structures were formed on the surface. The dots formation on the surface changes withdifferent composition of InxGa1-xAs underlying layer. Increasing indium composition in the underlying layer resulted to formation of higher density andsmaller size dots. Several large dots were also formed on the surface. Growing of underlying layer reduces the lattice mismatch between In0.5Ga0.5As andGaAs, and decreases the critical thickness of the dots. This strongly influences the dots nucleation on the surface. Growth of quantum dots usingunderlying layer is one way to modify dot formation in order to achieve uniform QDs of right size and high density, which are essential for QDs deviceapplications.

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“…Deposition of underlying layer before QDs layer is believed to have strong effects on the formation of wetting layer followed by QDs formation. Several studies on the effect of underlying layer on InGaAs QDs were previously carried out using InGaAlAs [2] and AlGaAs [3,4] as the underlying layer. These studies show that the QDs interconnection via the underlying layer has strong influence on the structural and op- * E-MAIL: didik phys@yahoo.co.id tical properties of In x Ga 1−x As/GaAs or InAs/GaAs QDs.…”

Section: Introductionmentioning

confidence: 99%

Influence of InxGa1−xAs Underlying Layer on the Structural of the In0.5Ga0.5As Quantum Dots Grown by MOCVD

Aryanto

Othaman

Ismail

2010

JFA

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The single layer In0.5Ga0.5As quantum dots (QDs) were grown on a thin InxGa1−xAs underlying layer by metal-organic chemical vapour deposition (MOCVD) via Stranski-Krastanow growth mode. The effect of different indium composition in the In − xGa1−xAs underlying layer was investigated using atomic force microscopy (AFM). AFM images show that the QDs structures were formed on the surface. The dots formation on the surface changes with different composition of InxGa1−xAs underlying layer. Increasing indium composition in the underlying layer resulted to formation of higher density and smaller size dots. Several large dots were also formed on the surface. Growing of underlying layer reduces the lattice mismatch between In0.5Ga0.5As and GaAs, and decreases the critical thickness of the dots. This strongly influences the dots nucleation on the surface. Growth of quantum dots using underlying layer is one way to modify dot formation in order to achieve uniform QDs of right size and high density, which are essential for QDs device applications.

show abstract

Tuning the wetting layer in the InGaAs/AlGaAs quantum dots

Cited by 6 publications

References 6 publications

Critical strain region evaluation of self-assembled semiconductor quantum dots

Critical strain region evaluation of self-assembled semiconductor quantum dots

Influence of InxGa1-xAs Underlying Layer on the Structural of the In0.5Ga0.5As Quantum Dots Grown by MOCVD

Influence of InxGa1−xAs Underlying Layer on the Structural of the In0.5Ga0.5As Quantum Dots Grown by MOCVD

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