Abstract:The single layer In0.5Ga0.5As quantum dots (QDs) were grown on a thin InxGa1−xAs underlying layer by metal-organic chemical vapour deposition (MOCVD) via Stranski-Krastanow growth mode. The effect of different indium composition in the In − xGa1−xAs underlying layer was investigated using atomic force microscopy (AFM). AFM images show that the QDs structures were formed on the surface. The dots formation on the surface changes with different composition of InxGa1−xAs underlying layer. Increasing indium composi… Show more
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