Tuning the physical properties of amorphous In-Zn-Sn-O thin films using combinatorial sputtering

Ndione, Paul F.; Zakutayev, Andriy; Kumar, Mahesh; Packard, Corinne E.; Berry, Joseph J.; Perkins, John D.; Ginley, David S.

doi:10.1557/mrc.2016.57

Cited by 13 publications

(7 citation statements)

References 38 publications

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“…In addition, accurate characterization of the structural features beyond the first shell (i.e., beyond the nearest neighbors) is necessary in order to explain the high sensitivity of the AOSs properties to the deposition [84] and post-deposition conditions, [64] particularly oxygen environment, [85] as well as the chemical composition of the sample. [67,86] In this work, ab initio MD simulations and hybrid-functional DFT-based electronic structure calculations are performed i) to systematically study the local and medium-range structural characteristics of several prototype In-based oxides with different degree of amorphization, oxygen stoichiometry, cation composition, and/or lattice strain and ii) to connect the structural peculiarities to the resulting electronic, optical, or thermal properties of each material. Based on good agreement between the theoretically established trends and those observed experimentally, a unified model for prototype In-based AOS is proposed.…”

Section: Mechanical Brittle Bendablementioning

confidence: 99%

“…Most research has focused on quaternary oxides such as a-In-Ga-Zn-O or a-Zn-In-Sn-O given their technological appeal; [48,49,[51][52][53][54][55][56][57][62][63][64][65][66]68,69,73,74,76] only a few studies addressed the properties of ternary AOSs systematically. [67,85,86] Moreover, a comparison of the results available in the literature is likely to be inconclusive because the crystallization temperature depends strongly not only on the metal composition but also on growth conditions (such as oxygen partial pressure, postdeposition temperatures and times) as well as film thickness.…”

Section: Local Structure and Amorphization Efficiencymentioning

confidence: 99%

See 1 more Smart Citation

Recent Advances in Understanding the Structure and Properties of Amorphous Oxide Semiconductors

Medvedeva

Buchholz

Chang

2017

Adv Elect Materials

138

144

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conductivity. [1] Following the discovery of SnO 2 with a similar unique combination of properties, [2] several patents were filed in the 1940s to employ TCOs as antistatic coatings and transparent heaters-long before the discovery of the now well-known Sn-doped In 2 O 3 (ITO) and Al-doped ZnO, [3] widely employed as flat panel display electrodes in the past decades. Despite great technological demand for TCOs [4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20] and extensive experimental efforts to improve the conductivity via impurity doping, [21,22] to tune the work function and carrier concentration via cation composition, [23][24][25][26][27][28] to achieve two-dimensional transport via heterointerfaces, [29] and to p-dope the oxides toward active layers of transparent electronics, [30][31][32] theoretical understanding of these fascinating materials has lagged behind significantly. The first electronic band structure of ITO was calculated in 2001; [33] the role of native defects in prototype TCOs was understood after 2002; [34][35][36][37] the properties of multi-cation TCOs were first considered in 2004 [37][38][39][40][41][42] followed by modeling of novel TCO hosts [43,44] and spin-dependent transport in transition-metal-doped TCOs; [45] the nature of the band gap in In 2 O 3 was clarified in 2008; [46] and a first highthroughput search for p-type TCOs was performed in 2013. [47] Complex oxides that consist of multiple post-transition metals, such as InGaZnO 4 , have recently become competitive with silicon as the active transistor layer to drive arrays of pixels in large area displays. [9,[13][14][15][16][17][18][19]24] As the billion-dollar display industry moves forward, the amorphous phase of the complex oxides is favored both for flexible and high-resolution display applications. [13][14][15][16][48][49][50][51][52][53][54][55][56][57][58][59] The unique properties of AOSs were first demonstrated in 1990, [60] and the research area has been growing exponentially since then. Unlike Si-based semiconductors, AOSs were shown to exhibit optical, electrical, thermal, and mechanical properties that are comparable or even superior to those possessed by their crystalline counterparts. [48][49][50][51][52][53][54][55][56][57][58] Table 1 summarizes the key physical properties of best-performing crystalline TCOs and AOSs; the differences (or the lack thereof) between the two will be discussed in detail in the respective sections below.

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Section: Mechanical Brittle Bendablementioning

confidence: 99%

Section: Local Structure and Amorphization Efficiencymentioning

confidence: 99%

Recent Advances in Understanding the Structure and Properties of Amorphous Oxide Semiconductors

Medvedeva

Buchholz

Chang

2017

Adv Elect Materials

138

144

View full text Add to dashboard Cite

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“…The technique can be also used to measure the surface potentials of dielectrics thin films deposited on top of semiconductors, with the measured contact potential difference (CPD) being strongly dependent on the presence of charge in andon the dielectrics [5]. Thanks to these capabilities the KP method [6] has become more widespread in the photovoltaics (PV) and optoelectronics field, including the large community studying perovskite solar cells [7,8], as well as groups working on silicon devices [9][10][11][12][13][14][15], and other thin film technologies [16,17]. The working principles of KP have long been reported and used in commercial instruments.…”

Section: Introductionmentioning

confidence: 99%

Modelling of Kelvin probe surface voltage and photovoltage in dielectric-semiconductor interfaces

Bonilla

2022

Mater. Res. Express

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The characterisation of dielectric-semiconductor interfaces via Kelvin probe surface voltage and photovoltage has become a widespread method of extracting the electrical properties influencing optoelectronic devices. Kelvin probe offers a versatile, contactless and vacuum-less technique able to provide useful insights into the electronic structure of semiconductor surfaces. Semiconductor theory has long been used to explain the observations from surface voltage measurements, often by making large assumptions about the characteristics of the system. In this work I report an updated theoretical treatment to model the results of Kelvin probe surface voltage and photovoltage measurements including four critical mechanisms: the concentration of charge stored in interface surface states, the charge stored in different locations of a surface dielectric thin film, the changes to effective lifetime and excess carrier density as a result of charge redistribution, and the non-uniformity of charge observed on most large scale thin film coatings used for passivation and optical improvement in optoelectronic devices. A full model is drawn and solved analytically to exemplify the role that these mechanisms have in surface voltage characterisation. The treatment in this work provides crucial understanding of the mechanisms that give rise to surface potential in semiconductors. As such this work will help the design and development of better optoelectronic devices.

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“…The 60 min duration of the deposition resulted in 200–400 nm thin films. More details about this combinatorial thin film deposition chamber at NREL have been previously reported. , …”

Section: Methodsmentioning

confidence: 99%

An Inter-Laboratory Study of Zn–Sn–Ti–O Thin Films using High-Throughput Experimental Methods

et al. 2019

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High-throughput experimental (HTE) techniques are an increasingly important way to accelerate the rate of materials research and development for many technological applications. However, there are very few publications on the reproducibility of the HTE results obtained across different laboratories for the same materials system, and on the associated sample and data exchange standards. Here, we report a comparative study of Zn−Sn−Ti−O thin films materials using high-throughput experimental methods at

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Tuning the physical properties of amorphous In-Zn-Sn-O thin films using combinatorial sputtering

Abstract: Abstract

Cited by 13 publications

References 38 publications

Recent Advances in Understanding the Structure and Properties of Amorphous Oxide Semiconductors

Recent Advances in Understanding the Structure and Properties of Amorphous Oxide Semiconductors

Modelling of Kelvin probe surface voltage and photovoltage in dielectric-semiconductor interfaces

An Inter-Laboratory Study of Zn–Sn–Ti–O Thin Films using High-Throughput Experimental Methods

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