2008
DOI: 10.1103/physrevlett.101.146805
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Tuning the Effective Fine Structure Constant in Graphene: Opposing Effects of Dielectric Screening on Short- and Long-Range Potential Scattering

Abstract: We reduce the dimensionless interaction strength α in graphene by adding a water overlayer in ultra-high vacuum, thereby increasing dielectric screening. The mobility limited by long-range impurity scattering is increased over 30 percent, due to the background dielectric constant enhancement leading to reduced interaction of electrons with charged impurities. However, the carrier-densityindependent conductivity due to short range impurities is decreased by almost 40 percent, due to reduced screening of the imp… Show more

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Cited by 340 publications
(336 citation statements)
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References 40 publications
(37 reference statements)
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“…Both graphene layers are p-doped and they present slightly different Fermi levels. This difference can be due to the defects induced in the graphene layers during growth or transfer 39 and to the influence of the surrounding dielectrics [40][41][42] . In addition to the different morphology of the surrounding dielectrics, contamination during processing 43 and molecules absorbed from ambient air 44 play a crucial role.…”
Section: Resultsmentioning
confidence: 99%
“…Both graphene layers are p-doped and they present slightly different Fermi levels. This difference can be due to the defects induced in the graphene layers during growth or transfer 39 and to the influence of the surrounding dielectrics [40][41][42] . In addition to the different morphology of the surrounding dielectrics, contamination during processing 43 and molecules absorbed from ambient air 44 play a crucial role.…”
Section: Resultsmentioning
confidence: 99%
“…27 We get sr =5ϫ 10 −3 S and = 5500 cm 2 / V s for the pristine graphene, and sr = 4.1 ϫ 10 −4 S and = 390 cm 2 / V s after ozone treatment. We note that lattice defects resulting in midgap states were recently identified as a new source of intervalley scattering.…”
Section: Discussionmentioning
confidence: 99%
“…Recently, it was predicted that for thin semiconducting nanostructures, impurity scattering can be reduced by surrounding the structure with high-κ dielectrics [14,15], and a recent experimental observation was made for graphene [16]. The reduction of impurity scattering is affected by the reduction of Coulomb scattering by the high-κ dielectric.…”
Section: Introductionmentioning
confidence: 99%