Tuning the cathodoluminescence of porous silicon films

Biaggi-Labiosa, Azlin; Fonseca, Luis F.; Resto, O.; Balberg, I.

doi:10.1016/j.jlumin.2007.08.009

Cited by 10 publications

(8 citation statements)

References 26 publications

(43 reference statements)

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“…In particular, after demonstrating that CL excitation can be achieved with a 2 keV electron beam, we studied the possible changes of the material and its PL and CL performance after a continuous electron irradiation. The results of this study are published elsewhere [12]. Furthermore, successful tuning of the CL was achieved, thus correlating the CL emission with the PL emission and implying the involvement of the quantum confinement effect in the CL.…”

supporting

confidence: 67%

“…The preparation of the PSi samples used for the tuning of the CL is explained elsewhere [12]. For the preparation of the PSi paste, free standing films were employed.…”

Section: Experimental 21 Sample Preparationmentioning

confidence: 99%

“…For the preparation of the PSi paste, free standing films were employed. First, the PSi films were prepared from 1-2 Ωcm, p-type, wafers using the anodization procedure described in reference [12] with a current density of 50mA/cm 2 for 50 min. Afterwards, the anodization solution was replaced by a 1:7:2 solution and an electric current density pulse of 135 mA/cm 2 for 0.7 sec was applied in order to disengage the anodized film from the original wafer before the drying process.…”

Section: Experimental 21 Sample Preparationmentioning

confidence: 99%

“…This procedure consists of letting the film to remain after anodization in the HF solution under illumination (Halogen lamp, 13.8 mW/cm 2 ) for a period of time. The preparation of the PSi samples used for the tuning of the CL is explained in reference [12]. The illumination promotes the electron-hole pair formation at the nanocrystallites and then enhances the subsequent local etching of the nanostructure.…”

Section: Measurements and Analysismentioning

confidence: 99%

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Porous silicon for field emission display applications

Biaggi-Labiosa

Solá

Resto

et al. 2008

Phys. Status Solidi (c)

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We have obtained cathodoluminescence (CL) emission from porous silicon (PSi) films by excitation with electrons with kinetic energies below 2 keV. We observed two types of CL emissions, a stable one and a non‐stable one. The stable emission is characterized by a CL peak that is red shifted with respect to its photoluminescence (PL) peak. The other CL emission is the most promising in terms of its application to field emission display technology. We were able to tune this CL emission by controlling the average size of the nanoparticles. This size dependence shows that the mechanism for this type of CL emission can be associated to the quantum confinement and surface chemistry effects that are known to exist in the porous silicon system. To further prove this point we were able to correlate this CL emission with its PL counterpart. In addition, we present our preliminary results for the beginning of a proof‐of‐concept for a field emission display using carbon nanofibers as the electron emitter component and a “PSi paste” as the display component. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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supporting

confidence: 67%

“…The preparation of the PSi samples used for the tuning of the CL is explained elsewhere [12]. For the preparation of the PSi paste, free standing films were employed.…”

Section: Experimental 21 Sample Preparationmentioning

confidence: 99%

Section: Experimental 21 Sample Preparationmentioning

confidence: 99%

Section: Measurements and Analysismentioning

confidence: 99%

See 2 more Smart Citations

Porous silicon for field emission display applications

Biaggi-Labiosa

Solá

Resto

et al. 2008

Phys. Status Solidi (c)

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“…An e-beam induced reduction of luminescence centers has been observed in related porous Si, which was synthesized using electrochemical etching. [39][40][41][42] While porous Si has been studied extensively with PL, the rapid degradation caused by e-beam exposure has resulted in far fewer studies with CL. Maurice et al 40 have found that exposure of porous associated with the desorption of hydrogen in hydrogenated amorphous silicon (a-Si:H).…”

Section: Cathodoluminescence (Cl) Spectroscopymentioning

confidence: 99%

The structural and optical properties of supercontinuum emitting Si nanocrystals prepared by laser ablation in water

Alima

Estrin

Rich

et al. 2012

Journal of Applied Physics

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Laser ablation of Si(100) targets immersed in deionized water at room temperature was studied by applying the second harmonic of a ns pulsed Nd:YAG laser and by employing different methods for characterization of the resulting nanocrystals (NCs). Spontaneous Raman scattering showed first order Raman spectra of the Si NCs, which varied in their Raman shift and width. The Raman data were analyzed using a phonon confinement model, involving three-dimensional confinement and lognormal size distributions for the nanocrystallites constituting the samples, indicating the presence of particles greater than $2 nm diameter. High-resolution transmission electron microscopy and electron diffraction of the as-prepared samples showed NCs with diameters greater than $1.75 nm and quantum dots, corresponding to Si/SiO x. The optical properties of the Si NCs were studied with cathodoluminescence (CL) spectroscopy for sample temperatures in the 50-300 K range, which exhibited a supercontinuum emission ranging from the near ultraviolet to the red regions. The emission is characterized by four major emission bands, peaked at 1.88, 2.18, 2.64 and 3.44 eV, which practically remain at the same positions as the temperature is varied. These bands are assigned to excitonic recombination in the Si NCs, whose electron/hole transition energies are consistent with the quantum confinement of carriers in four size-dispersed groups of Si NCs. The influence of electron beam irradiation on the passivation of the NCs was examined, showing quenching of the CL as a function of electron-beam exposure time. This quenching is attributed to desorption of hydrogen, disruption of the NC surface passivation, and formation of nonradiative recombination channels involving surface states in the gap. The approach used in this study demonstrates the possibility of growing nano-scale Si crystals with the potential for incorporation into optoelectronic devices or for use in biomedical applications. V

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Effects of Irradiation on Porous Silicon

Koropecki¹,

Arce²

2014

Handbook of Porous Silicon

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Tuning the cathodoluminescence of porous silicon films

Cited by 10 publications

References 26 publications

Porous silicon for field emission display applications

Porous silicon for field emission display applications

The structural and optical properties of supercontinuum emitting Si nanocrystals prepared by laser ablation in water

Effects of Irradiation on Porous Silicon

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