2005
DOI: 10.1016/j.ssc.2005.05.051
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Tuning the bandgap of ZnO by substitution with Mn2+, Co2+ and Ni2+

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Cited by 209 publications
(63 citation statements)
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“…It has been observed earlier by other groups [13,14] that upon Mn doping in ZnO the band gap reduces for low concentration doping (< 3 mol% of Mn) and for higher concentration ( > 3 mol%) the band gap increases as expected on the basis of virtual crystal approximation (VCA) because of the band gap of the MnO ~ 4.2 eV. In many dilute magnetic semiconductor (DMS) systems such deviation from the linear monotonic increase in the form of "band gap bowing" has been observed [15][16][17][18][19][20][21] …”
Section: Introductionsupporting
confidence: 76%
“…It has been observed earlier by other groups [13,14] that upon Mn doping in ZnO the band gap reduces for low concentration doping (< 3 mol% of Mn) and for higher concentration ( > 3 mol%) the band gap increases as expected on the basis of virtual crystal approximation (VCA) because of the band gap of the MnO ~ 4.2 eV. In many dilute magnetic semiconductor (DMS) systems such deviation from the linear monotonic increase in the form of "band gap bowing" has been observed [15][16][17][18][19][20][21] …”
Section: Introductionsupporting
confidence: 76%
“…Co(II). A similar observation was made for Co(II) doped ZnO, 44,45 an increase is observed for cations such as Al(III) and Ga(III), with a larger mass difference than Zn(II) and Co(II). 46 Considering the literature data for the values of the band gap i.e.…”
Section: Specific Surface Area (Ssa) Pore Volume and Average Pore DIsupporting
confidence: 78%
“…5(d)] shows a rapid increase from 3.23 6 0.01 to 3.27 6 0.01 eV when increasing the RF-power from 30 to 40 W and then increases further to 3.28 6 0.02 eV for 150 W. This allows for bandgap tuning in a small range without the need for dopants, 54,55 applicable in a range of optical and electronic applications. The obtained value for the bandgap using Tauc fitting compares well with the literature; for example, Viezbicke et al 41 found an average value for the bandgap of 3.276 6 0.033 eV, comparing a large number of publications on thin film ZnO.…”
Section: B Tuning Of Structural and Optical Properties By Rf-powermentioning
confidence: 97%