2021
DOI: 10.1021/acs.nanolett.0c03183
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Tuning Supercurrent in Josephson Field-Effect Transistors Using h-BN Dielectric

Abstract: Epitaxial Al-InAs heterostructures appear as a promising materials platform for exploring mesoscopic and topological superconductivity. A unique property of Josephson junction field effect transistors (JJ-FETs) fabricated on these heterostructures is the ability to tune the supercurrent using a metallic gate. Here, we report the fabrication and measurement of gate-tunable Al-InAs JJ-FETs in which the gate dielectric in contact with the InAs is produced by mechanically exfoliated hexagonal boron nitride (h-BN) … Show more

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Cited by 17 publications
(7 citation statements)
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“…Experimental feasibility of the proposed mini-gate controlled MBS fusion builds on the demonstrated topological superconductivity in epitaxial InAs/Al planar JJs 31 , 42 . This is further corroborated by using the same platform to demonstrate that mini gates can modulate the superconducting state in our fabricated SJ, shown with scanning electron microscope (SEM) images in Fig.…”
Section: Resultsmentioning
confidence: 96%
“…Experimental feasibility of the proposed mini-gate controlled MBS fusion builds on the demonstrated topological superconductivity in epitaxial InAs/Al planar JJs 31 , 42 . This is further corroborated by using the same platform to demonstrate that mini gates can modulate the superconducting state in our fabricated SJ, shown with scanning electron microscope (SEM) images in Fig.…”
Section: Resultsmentioning
confidence: 96%
“…As an SiO x or AlO x gate dielectric could introduce a higher density of charge traps and interface states [61], it may be more favorable to use monolayer thick h-BN as a gate dielectric, which has low density of charge traps, and low microwave absorption, possibly leading to better device performance while maintaining supercurrent tunability [62].…”
Section: Discussionmentioning
confidence: 99%
“…We develop a top gate structure by using h-BN as the dielectric layer to minimize the distance between the gate and the superconductor, which enables the investigation of the gating effect in metallic superconductors on several nanometer scales of gating distance. BN crystal possesses desirable properties for our vertical devices, such as a high-quality insulator with a large bandgap, low dielectric constant, and precise control over thickness at the atomic layer level [36,37]. Thus, it is an ideal choice for serving as the insulating layer in our devices.…”
Section: Sample Fabrication and Measurement Techniquesmentioning
confidence: 99%