Tuning growth direction of catalyst-free InAs(Sb) nanowires with indium droplets

Potts, Heidi; Morgan, Nicholas; Tütüncüoǧlu, Gözde; Friedl, Martin; Morral, Anna Fontcuberta i

doi:10.1088/1361-6528/28/5/054001

Cited by 28 publications

(31 citation statements)

References 48 publications

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“…At a critical angle the droplet would slide on to the nanowire sidewall facets. Sliding of the droplet as a result of increasing volume was recently observed by Potts et al [60].…”

Section: Contact Anglementioning

confidence: 63%

Semiconductor nanowires: to grow or not to grow?

McIntyre

Morral

2020

Materials Today Nano

114

122

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Semiconductor nanowires have demonstrated exciting properties for nanophotonics, sensors, energy technologies, and end-of-roadmap and beyond-roadmap electronic devices. Fabrication schemes for nanowires are varied, but they fall into three general categories: (1) top-down lithographic patterning and etching of bulk crystals and epitaxial films; (2) bottom-up, locally catalyzed crystal growth of nanowires; and (3) hybrid methods that combine aspects of categories (1) and (2). In this article, we examine the relative merits and unique attributes of each of these paradigms for nanowire synthesis. We review literature relevant to nanowire fabrication methods, faceting and dimensional control (diameter and length), positioning and alignment, doping, bulk and surface defects, and formation of unique nanowire heterostructures and metastable phases. Finally, we describe the factors governing selection among top-down, bottom-up, and hybrid methods to fabricate nanowire structures depending on their desired structural features and applications.

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“…At a critical angle the droplet would slide on to the nanowire sidewall facets. Sliding of the droplet as a result of increasing volume was recently observed by Potts et al [60].…”

Section: Contact Anglementioning

confidence: 63%

Semiconductor nanowires: to grow or not to grow?

McIntyre

Morral

2020

Materials Today Nano

114

122

View full text Add to dashboard Cite

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“…The experiments show that, with increasing the annealing time, the droplets increase their volume and move from the NW tip to the side facets, wetting simultaneously two {110} facets. In a related publication, we have shown that these droplets can be further used to nucleate the growth of InAs in a second step in the form of branches perpendicular to the direction of the primary NW [24,42].…”

Section: Experimental Results: Indium Droplets On Inas Nwsmentioning

confidence: 99%

“…Recently, it has been shown that the characteristics of the liquid droplet are essential for many aspect of the growth of the NWs. In particular, it has been shown that the droplet contact angle with the solid NW determines the crystal phase, growth direction, orientation and polarity of the NW itself [8,[22][23][24][25][26]. To that end, we believe that the direct translation of capillarity laws from the planar to the non-planar nanoscale case has not been discussed with enough depth.…”

Section: Introductionmentioning

confidence: 96%

Questioning liquid droplet stability on nanowire tips: from theory to experiment

et al. 2019

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Liquid droplets sitting on nanowire (NW) tips constitute the starting point of the vapor-liquidsolid method of NW growth. Shape and volume of the droplet have been linked to a variety of growth phenomena ranging from the modification of growth direction, NW orientation, crystal phase, and even polarity. In this work we focus on numerical and theoretical analysis of the stability of liquid droplets on NW tips, explaining the peculiarity of this condition with respect to the wetting of planar surfaces. We highlight the role of droplet pinning at the tip in engineering the contact angle. Experimental results on the characteristics of In droplets of variable volume sitting on the tips or side facets of InAs NWs are also provided. This work contributes to the fundamental understanding of the nature of droplets contact angle at the tip of NWs and to the improvement of the engineering of such nanostructures.

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“…InAs nanowires are grown by molecular beam epitaxy (MBE) on GaAs(111)B substrates covered with 4.5 nm of HSQ oxide, as explained in ref 19. Figure 1a,b shows representative top view and cross-sectional scanning electron micrographs (SEM) of samples obtained under typical conditions (530°C, V/III flux ratio of 13.5).…”

Section: ■ Results and Discussionmentioning

confidence: 99%

Tilting Catalyst-Free InAs Nanowires by 3D-Twinning and Unusual Growth Directions

Potts

Hees

Tütüncüoǧlu

et al. 2017

Crystal Growth & Design

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Controlling the growth direction of nanowires is of strategic importance both for applications where nanowire arrays are contacted in parallel and for the formation of more complex nanowire networks. We report on the existence of tilted InAs nanowires on (111)B GaAs. The tilted direction is predominantly the result of a three-dimensional twinning phenomenon at the initial stages of growth, so far only observed in VLS growth. We also find some nanowires growing in ⟨112⟩ and other directions. We further demonstrate how the tilting of nanowires can be engineered by modifying the growth conditions, and outline the procedures to achieve fully vertical or tilted nanowire ensembles. Conditions leading to a high density of tilted nanowires also provide a way to grow nanoscale crosses. This work opens the path toward achieving control over nanowire structures and related hierarchical structures. ■ INTRODUCTIONSemiconductor nanowires are promising candidates for future electronic, optoelectronic, and energy harvesting devices as well as a platform to investigate low-dimensional phenomena.1−8 In certain applications such as light emitting diodes or solar cells, it is highly desirable that nanowires are contacted in parallel on as-grown substrates. In this case, a complete control of the nanowire growth direction is essential in order to avoid leakage or open-circuit pathways. For other applications such as Majorana Fermion quantum computing, the growth direction determines the g-factor and spin−orbit interaction. In addition, any quantum logic involving Majorana Fermions requires more than one branch, e.g., nanowire crosses are desired. 9−11In general, III−V nanowires grow preferentially in the ⟨111⟩B direction, resulting in mostly vertical nanowires when grown on (111)B substrates. Interest in nonconventional growth directions has increased significantly during the last years, and in the case of metal-catalyzed nanowires, a variety of different directions have been reported.12 Recent examples include ⟨111⟩A oriented GaAs and GaSb nanowires, 13,14 and InP nanowires for which the direction can be switched between ⟨111⟩B and ⟨100⟩.15 In addition, InAs nanowires in ⟨001⟩ direction and ⟨112⟩ direction have been demonstrated for goldcatalyzed MOVPE growth. 16 The change in growth direction has been attributed to a change of contact angle of the liquid droplet in the vapor−liquid−solid (VLS) mechanism, or by dynamics at the growth interface. Recently, unconventional growth directions have also been observed for self-catalyzed nanowires. A small fraction of GaAsSb nanowires was found to grow in ⟨112⟩ direction, 17 GaAs nanowires in the ⟨111⟩A direction have been engineered, 18 and InAs nanowires turning from ⟨111⟩B to ⟨112̅ ⟩ direction have been demonstrated. 19,20 However, tilted nanowires are not in all cases related to the growth in nonconventional crystalline directions. In some cases they can also explained by nucleation from parasitic growth (no crystalline relation with the substrate) or by multiple-order thr...

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Tuning growth direction of catalyst-free InAs(Sb) nanowires with indium droplets

Cited by 28 publications

References 48 publications

Semiconductor nanowires: to grow or not to grow?

Semiconductor nanowires: to grow or not to grow?

Questioning liquid droplet stability on nanowire tips: from theory to experiment

Tilting Catalyst-Free InAs Nanowires by 3D-Twinning and Unusual Growth Directions

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