Tuning giant anomalous Hall resistance ratio in perpendicular Hall balance

Zhang, J. Y.; Yang, Guang; Wang, S. G.; Liu, J. L.; Wang, R. M.; Amsellem, E.; Köhn, A.; Yu, Guo

doi:10.1063/1.4918372

Cited by 11 publications

(3 citation statements)

References 32 publications

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“…The details about the sample preparation, microfabrication, annealing process, and transport measurements can be found in our previous work. [20,21]…”

Section: Methodsmentioning

confidence: 99%

Interplay of Rashba effect and spin Hall effect in perpendicular Pt/Co/MgO magnetic multilayers

et al. 2016

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The interplay of the Rashba effect and the spin Hall effect originating from current induced spin-orbit coupling was investigated in the as-deposited and annealed Pt/Co/MgO stacks with perpendicular magnetic anisotropy. The above two effects were analyzed based on Hall measurements under external magnetic fields longitudinal and vertical to dc current, respectively. The coercive field as a function of dc current in vertical mode with only the Rashba effect involved decreases due to thermal annealing. Meanwhile, spin orbit torques calculated from Hall resistance with only the spin Hall effect involved in the longitudinal mode decrease in the annealed sample. The experimental results prove that the bottom Pt/Co interface rather than the Co/MgO top one plays a more critical role in both Rashba effect and spin Hall effect.

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“…The details about the sample preparation, microfabrication, annealing process, and transport measurements can be found in our previous work. [20,21]…”

Section: Methodsmentioning

confidence: 99%

Interplay of Rashba effect and spin Hall effect in perpendicular Pt/Co/MgO magnetic multilayers

et al. 2016

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“…Recently, above mentioned obstacles have been addressed by introducing skyrmions in antiferromagnetic (AFM) magnets due to their inhibited SkHE [25] and negligible stray fields. [26] In particular, the synthetic antiferromagnet (SAF) structures, [27,28] consisting of two FM layers separated by a spacer, have been considered to be a promising candidate to study AFM skyrmions due to the presence of interlayer DMI and perpendicular magnetic anisotropy (PMA). [29] The interfacial coupling type (FM or AFM) between the magnetic layers can be tuned by tailoring thicknesses of the spacer layers through the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction.…”

Section: Introductionmentioning

confidence: 99%

Non-volatile multi-state magnetic domain transformation in a Hall balance

et al. 2022

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High performance of the generation, stabilization and manipulation of magnetic skyrmions prompts the application of topological multilayers in spintronic devices. Skyrmions in synthetic antiferromagnets (SAF) have been considered to be a promising alternative to overcome the limitations of ferromagnetic skyrmions, such as the skyrmion Hall effect and stray magnetic field. Here, by using the Lorentz transmission electron microscopy, the interconversion between the single domain, labyrinth domain and skyrmion state can be observed by the combined manipulation of electric current and magnetic field in a Hall balance (A SAF with the core structure of [Co/Pt]4/NiO/[Co/Pt]4) showing perpendicular magnetic anisotropy). Furthermore, high-density room temperature skyrmions can be stabilized at zero field while the external stimulus is removed and the skyrmion density is tunable. The generation and manipulation method of skyrmions in Hall balance in this study opens up a promising way to engineer SAF-skyrmion-based memory devices.

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“…Spin manipulation has provided an open way for the information storage/communication and logic operation in past decades, where the semiconductor industry is under the limit of Moor’s law. − The composite materials with the spin-dependent effect are explosively launched with the development of nanotechnology, but more attention has been paid to manipulate the spin without external magnetic fields (e.g., spin polarized current and electric field) to achieve the high-quality spintronic device. − Recently, spin–orbit torque (SOT) induced by the spin Hall effect has been demonstrated theoretically and experimentally to tune anomalous Hall resistance. − Therefore, the memory device based on the spin-dependent Hall effect with the imbalanced transverse spin polarization charge is considered as a promising candidate for storage and logic with potential ultrahigh density, ultralow power consumption, and ultrahigh speed. − Therefore, more focus has been put on intrinsic properties of the device based on the spin-dependent Hall effect. Unfortunately, few work was reported on the hybrid spin device/complementary metal/oxide-semiconductor (CMOS) transistor circuit .…”

Section: Introductionmentioning

confidence: 99%

Tunable Giant Anomalous Hall Angle in Perpendicular Multilayers by Interfacial Orbital Hybridization

Zhang¹,

Peng²,

Yu³

et al. 2019

ACS Appl. Mater. Interfaces

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A spintronic device based on the spin-dependent Hall effect has attracted great interest because of its great potential applications in the multivalue storage and logic gate, which is a promising candidate to break the bottleneck of the information industry in the big data period. It is a technological challenge to implant spintronic devices into semiconductor integrated circuits. The anomalous Hall angle (θ), defined as the deviation of the electron flow from the current direction, is the key parameter to evaluate the capacity of Hall device compatibility. However, the bottleneck for the device is low θ (less than 5%) at room temperature (RT), making it difficult to directly complement with the semiconductor circuit which limits its potential application. Here, we report a simple perpendicular multilayered structure with θ up to 5.1% at RT. Wide working temperature (250−350 K) across RT for our samples will accelerate the potential applications in spintronic memory. A giant Hall angle at RT originates from the enhanced side-jump scattering at the atomic-scale-modified interfacial structure. The high θ at RT together with wide working temperature is practically significant and may provide the way for further 3D spintronic devices based on the spin-dependent Hall effect with ultrahigh storage density and ultralow power consumption.

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Tuning giant anomalous Hall resistance ratio in perpendicular Hall balance

Cited by 11 publications

References 32 publications

Interplay of Rashba effect and spin Hall effect in perpendicular Pt/Co/MgO magnetic multilayers

Interplay of Rashba effect and spin Hall effect in perpendicular Pt/Co/MgO magnetic multilayers

Non-volatile multi-state magnetic domain transformation in a Hall balance

Tunable Giant Anomalous Hall Angle in Perpendicular Multilayers by Interfacial Orbital Hybridization

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