Abstract:Irradiation with electrons is an efficient approach to inducing a large number of defects with a minimal impact on the material itself. Analysis of the energy transfer from an accelerated particle smashing into the crystal lattice shows that only electrons with MeV energies produce point defects in the form of interstitial ions and vacancies that form perfect scattering centers. Here, we investigate the changes in the resistive characteristics of YBCO single crystals from the 1-2-3 system after several steps o… Show more
The influence of electron irradiation with energies of 0.5–2.5 MeV with fluences up to 70 × 1018 cm–2 on the electrical resistivity in the basal plane of YBa2Cu3O7–δ single crystals in the temperature range from the superconducting transition, Tc, to 300 K has been studied. Such irradiation leads to the appearance of a significant number of defects that cause a decrease in anisotropy, an appreciable increase in phonon scattering, reduction of Tc, and broadening of the superconducting transition. Under the conditions specified, the temperature dependence of electrical resistivity is approximated with high accuracy by the charge carriers’ scattering on defects and phonons, and fluctuating conductivity in the Lawrence-Doniach (LD) model. The dependences of approximation parameters on fluence are discussed.
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