The effect of medium doses electron irradiation on the scattering of charge carriers in YBa2Cu3O7-δ single crystal

Abstract

The influence of electron irradiation with energies of 0.5–2.5 MeV with fluences up to 70 × 1018 cm–2 on the electrical resistivity in the basal plane of YBa2Cu3O7–δ single crystals in the temperature range from the superconducting transition, Tc, to 300 K has been studied. Such irradiation leads to the appearance of a significant number of defects that cause a decrease in anisotropy, an appreciable increase in phonon scattering, reduction of Tc, and broadening of the superconducting transition. Under the conditions specified, the temperature dependence of electrical resistivity is approximated with high accuracy by the charge carriers’ scattering on defects and phonons, and fluctuating conductivity in the Lawrence-Doniach (LD) model. The dependences of approximation parameters on fluence are discussed.