Tungsten oxide ion gel-gated transistors: how structural and electrochemical properties affect the doping mechanism

Barbosa, Martin Schwellberger; Oliveira, Fernando Modesto Borges de; Meng, Xiang; Soavi, Francesca; Santato, Clara; Orlandi, Marcelo Ornaghi

doi:10.1039/c7tc04529h

Cited by 20 publications

(9 citation statements)

References 41 publications

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“…Electrolyte‐gated transistors (EGTs), including electric double layer transistors (EDLTs) and organic electrochemical transistors (OECTs), are being developed by a number of research groups for applications in sensing and printed electronics . Attractive features of EGTs are their very high transconductances and low voltage characteristics, both of which derive from the huge specific capacitance of the electrolyte gate dielectrics that they employ, which varies from ≈10 μF cm −2 in the double layer operating regime to over 100 μF cm −2 in the electrochemical regime …”

Section: Introductionmentioning

confidence: 99%

Sub‐3 V ZnO Electrolyte‐Gated Transistors and Circuits with Screen‐Printed and Photo‐Crosslinked Ion Gel Gate Dielectrics: New Routes to Improved Performance

Bidoky

Tang

et al. 2019

Adv Funct Materials

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A facile, high-resolution patterning process is introduced for fabrication of electrolyte-gated transistors (EGTs) and circuits using a photo-crosslinkable ion gel and stencil-based screen printing. The photo-crosslinkable gel is based on a triblock copolymer incorporating UV-sensitive terminal azide functionality and a common ionic liquid. Using this material in conjunction with conventional photolithography and stenciling techniques, well-defined 0.5-1 µm thick ion gel films are patterned on semiconductor channels as narrow as 10 µm. The resulting n-type ZnO EGTs display high electron mobility (>2 cm 2 Vs −1 ) and on/off current ratios (>10 5 ). Further, EGT-based inverters exhibit static gains >23 at supply voltages below 3 V, and five-stage EGT ring oscillator circuits display dynamic propagation delays of 50 µs per stage. In general, the screen printing and photo-crosslinking strategy provides a clean room-compatible method to fabricate EGT circuits with improved sensitivity (gain) and computational power (gain × oscillating frequency). Detailed device analysis indicates that significantly shorter delay times, of order 1 µs, can be obtained by improving the ion gel conductance.

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Section: Introductionmentioning

confidence: 99%

Sub‐3 V ZnO Electrolyte‐Gated Transistors and Circuits with Screen‐Printed and Photo‐Crosslinked Ion Gel Gate Dielectrics: New Routes to Improved Performance

Bidoky

Tang

et al. 2019

Adv Funct Materials

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Section: Rubbery Dielectricsmentioning

confidence: 99%

“…Under an electric field across the ion gel, a thin electric double layer is formed at both interfaces (between the ion gel/semiconductor and the ion gel/ gate electrode) which leads to a high capacitance at the interfaces. [155][156][157] Based on those advantages, ion gel was widely used for not only rigid field effect transistors, [158][159][160][161][162][163][164][165] but also various stretchable electronics. [59,64,133,[166][167][168] As an example, Lee et al developed a stretchable graphene transistor by using ion gel as the gate dielectric made from poly(styrene-methyl methacrylate-styrene) (PS-PMMA-PS) triblock copolymer as the matrix and 1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide (EMIM-TFSI) as the ionic liquid: the transistor showed a high hole mobility of 1188 cm 2 V −1 s −1 with 5% stretchability (Figure 8a).…”

Section: Ion Gelsmentioning

confidence: 99%

Rubbery Electronics Fully Made of Stretchable Elastomeric Electronic Materials

2019

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processes, and device structures have been transforming traditional wafer electronics to be soft, stretchy, and reconfigurable. In particular, owing to their superior mechanical characteristics, i.e., soft, bendable, stretchable, and twistable, stretchable electronics hold promise in health monitors, [1] medical implants, [2][3][4][5][6][7][8][9][10] artificial skins, [5,6,[11][12][13][14][15] human-machine interfaces, [11,[16][17][18][19][20] wearable internet of things, [21][22][23][24] etc.As the core and fundamental building block of active electronics, transistors constructed from semiconductors, conductors, and dielectrics are key to enabling electrical functionalities such as switching and amplification. To make transistors stretchable, either the associated electronic materials need to be stretchable or special mechanical structures and layouts need to be included in the transistor design. There are many studies reporting stretchable conductors, as reviewed in the following, while many readily available dielectric materials are stretchy. These have significantly offered many possible options in the device design space. To date, the dominant semiconductors employed for stretchable electronics are either conventional or emerging semiconductors. However, these materials, either in the format of inorganics (such as Si, GaAs, oxides) or organics (such as poly(3-hexylthiophene-2,5-diyl) or P3HT, pentacene), are mechanically nonstretchable. [20,21] Existing strategies to make these nonstretchable semiconductors stretchable mainly involve creating special mechanical structures or architectures with these materials, such as out-of-plane wrinkles, [25,26] in-plane serpentines, [27,28] rigid islands with deformable interconnects, [29][30][31] and kirigami architectures, [32][33][34] to eliminate mechanical strain while they are stretched. However, these approaches require sophisticated structural designs, complicated manufacturing processes, or consume a large area due to stretchable interconnection, all of which pose substantial challenges in high-density integration, packaging, associated high cost, and mass production.Constructing devices all from intrinsically stretchable elastomeric electronic materials offers another interesting yet promising route toward stretchable transistors and electronics. These types of electronics, namely rubbery electronics, neatly avoid the aforementioned challenges since they do not require structural engineering for device fabrication and the manufacturing processes can be adopted into conventional fabrication processes. [29,35] In addition, rubbery electronics offer better cost Stretchable electronics outperform existing rigid and bulky electronics and benefit a wide range of species, including humans, machines, and robots, whose activities are associated with large mechanical deformation and strain. Due to the nonstretchable nature of most electronic materials, in particular semiconductors, stretchable electronics are mostly realized through the strategies of architectural engine...

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“…11,12) In addition, this material attracts considerable attention for application to novel iontronic FETs. [13][14][15][16][17] Owing to the wide application field and functionality, experimental 18,19) and theoretical 20,21) studies have been reported for the EC mechanism by many researchers.…”

mentioning

confidence: 99%

Electrochromic properties of epitaxial WO₃ thin films grown on sapphire substrates

Yano

Kuwagata

Mito

et al. 2018

Jpn. J. Appl. Phys.

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Electrochromic properties are reported for monoclinic (001) WO3 epitaxial films grown on r-plane sapphire substrates. By applying a positive bias in 10 mM aqueous solution of sulfuric acid, an immediate increase in optical reflectance in a near-infrared region and a subsequent increase in optical absorbance in a visible to near-infrared region were generated by forming a hydrate and a tungsten bronze, respectively. The tungsten bronze disappeared after applying a negative bias in the solution, while the hydrate remained and required an annealing in air to disappear. These transitions were reversibly and repeatedly observed despite the restriction by the substrate.

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Tungsten oxide ion gel-gated transistors: how structural and electrochemical properties affect the doping mechanism

Abstract: Electrolyte-gated transistors hold promise for applications in printable and flexible electronics.

Cited by 20 publications

References 41 publications

Sub‐3 V ZnO Electrolyte‐Gated Transistors and Circuits with Screen‐Printed and Photo‐Crosslinked Ion Gel Gate Dielectrics: New Routes to Improved Performance

Sub‐3 V ZnO Electrolyte‐Gated Transistors and Circuits with Screen‐Printed and Photo‐Crosslinked Ion Gel Gate Dielectrics: New Routes to Improved Performance

Rubbery Electronics Fully Made of Stretchable Elastomeric Electronic Materials

Electrochromic properties of epitaxial WO₃ thin films grown on sapphire substrates

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Tungsten oxide ion gel-gated transistors: how structural and electrochemical properties affect the doping mechanism

Abstract: Electrolyte-gated transistors hold promise for applications in printable and flexible electronics.

Cited by 20 publications

References 41 publications

Sub‐3 V ZnO Electrolyte‐Gated Transistors and Circuits with Screen‐Printed and Photo‐Crosslinked Ion Gel Gate Dielectrics: New Routes to Improved Performance

Sub‐3 V ZnO Electrolyte‐Gated Transistors and Circuits with Screen‐Printed and Photo‐Crosslinked Ion Gel Gate Dielectrics: New Routes to Improved Performance

Rubbery Electronics Fully Made of Stretchable Elastomeric Electronic Materials

Electrochromic properties of epitaxial WO3 thin films grown on sapphire substrates

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Product

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Electrochromic properties of epitaxial WO₃ thin films grown on sapphire substrates