Tungsten-doped In2O3 transparent conductive films with high transmittance in near-infrared region

Amorphous tungsten-doped In2O3 transparent conductive films deposited at room temperature from metallic target

“…This result is similar to that of IMO films [12] and agrees with the crystalline temperature of roughly up to 150°C for In 2 O 3 -based transparent conductive thin films in similar processes. For comparison, typical polycrystalline IWO thin films prepared at 320°C in our previous work [10] is also shown in Fig. 1, with each diffraction peak identified being consistent with that of bixbyite-type In 2 O 3 .…”

“…Compared with formerly reported polycrystalline IWO films [10], the resistivity of amorphous IWO films is a little higher, but still relatively low compared with ITO films deposited at room temperature [15,16]. The carrier mobility is lower than crystalline films owing to the long-range disorder, whereas, the value is high among amorphous TCOs [16,17].…”

“…The average transmittance from 400 to 2500 nm is relatively higher than conventionally sputtered polycrystalline ITO [9,10], whose transmittance curve declines evidently at wavelength over 1200 nm. It indicates that amorphous IWO have potential application in solar cells to transmit more long-wavelength radiation, as well as in energy-efficient windows installed in cold regions to transmit more sunlight into the room.…”

“…Lately reported polycrystalline molybdenum-doped indium oxide (IMO) [6,7] and tungsten-doped indium oxide (IWO) [8,9] thin films are attractive due to their high carrier mobility producing a low resistivity comparable to that of ITO films. In our previous work [10,11], investigations into carrier concentration, carrier mobility and transparency in the near-infrared region of polycrystalline IWO were carried out. The films exhibited higher carrier mobility (67 cm 2 V À1 s À1 ) and lower carrier concentration (2.8 Â 10 20 cm À3 ) than those of ITO films (21 cm 2 V À1 s À1 , 9.4 Â 10 20 cm À3 ) for the same resistivity.…”

Buffer and anode-integrated WO3-doped In2O3 electrodes for PEDOT:PSS-free organic photovoltaics

“…Zhang et al suggested that W 6+ substitutes for In 3+ sites, thereby producing three excess electrons in the IWO films [22]. Due to the effective activation of W dopants, the carrier concentration in the IWO also increased with increasing RTA temperature.…”