Buffer and anode-integrated WO3-doped In2O3 electrodes for PEDOT:PSS-free organic photovoltaics

Kim, Jun Ho; Kang, Sin Bi; Lee, Ju Hyun; Shin, Yong Hee; Shin, Hyun Su; Kwon, Dae Gyeon; Seong, Tae Yeon; Park, Yongsup; Na, Seok In; Kim, Han Ki

doi:10.1016/j.orgel.2013.02.025

Cited by 18 publications

(4 citation statements)

References 27 publications

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“…Most of the amorphous oxide TFTs have been developed based on the electronegativity and standard electrode potential of dopants. 58,62,65 Three decades ago, Wen et al, 80 recently Kim research group [81][82][83][84][85][86][87][88][89][90][91][92] and Parthiban et al 34,93,94 have developed high-mobility Zr-, Germanium (Ge-), Sn-, W-, Nb-, Mo-, Si-, and Ti-doped indium oxide transparent conducting thin-films, which were followed by the development of empirical relations and postulates by Zhang. 95 The empirical relationship associated with electron negativity, ionic radii, and effective charge of dopants, was proposed by Zhang and defined the function as a scale for strength of Lewis acids.…”

Section: How To Choose the Appropriate Carrier Suppressor Dopantsmentioning

confidence: 99%

Role of dopants as a carrier suppressor and strong oxygen binder in amorphous indium-oxide-based field effect transistor

2014

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Section: How To Choose the Appropriate Carrier Suppressor Dopantsmentioning

confidence: 99%

Role of dopants as a carrier suppressor and strong oxygen binder in amorphous indium-oxide-based field effect transistor

2014

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“…During the ion plating process, the ionized W 6+ or W 4+ ions easily substitute the In 3+ sites in the In 2 O 3 matrix and produce excess electrons in the IWO films. In addition, the screening effect of the W dopant reduced the scattering of electrons and increased the carrier mobility, as experienced in high mobility transparent conducting oxides 22,34–44 . As suggested by Zhang et al ., high mobility of the In 2 O 3 -based transparent conducting oxide film could be explained by high Lewis acid strength (LAS) of transition metal dopants such as Ti 4+ , Zr 4+ , Gd 3+ , Mo 6+ , and W 6+ 45,46 .…”

Section: Resultsmentioning

confidence: 99%

“…However, each FTCE material still has critical problems to overcome to replace amorphous ITO electrodes such as the quality of TCE, scalability, possibility of mass production, and compatibility with the current device fabrication processes. Another promising FTCE scheme is high-mobility oxide TCEs such as InWO, InMoO, InZrO, InTiO, InNbO, InTaO, and InGeO films prepared by typical sputtering processes 22–28 . However, the high mobility oxide TCEs prepared by low-temperature sputtering also require a high-temperature annealing process to increase the carrier mobility because the kinetic energy of atoms sputtered on the flexible substrate is quite low.…”

Section: Introductionmentioning

confidence: 99%

Room temperature processed high mobility W-doped In2O3 electrodes coated via in-line arc plasma ion plating for flexible OLEDs and quantum dots LEDs

Kim

Lee

et al. 2018

Sci Rep

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We fabricated W-doped In2O3 (IWO) films at room temperature on a flexible PET substrate using an in-line arc plasma ion plating system for application as flexible transparent conducting electrodes (FTCEs) in flexible organic light emitting diodes (OLEDs) and quantum dots light emitting diodes (QDLEDs). Due to the high-energy flux of the sublimated ions generated from the plasma region, the IWO films showed a well-developed crystalline structure with a low sheet resistance of 36.39 Ohm/square and an optical transmittance of 94.6% even though they were prepared at room temperature. The low sheet resistance of the IWO film processed at room temperature is attributed to the high mobility (59 cm2/V-s) in the well-developed crystalline structure of the ion-plated IWO film and screening effect of W dopants. In addition, the better adhesion of the ion-plated IWO film on the PET substrate led to small critical outer and inner bending radii of 6 and 3 mm, respectively, against substrate bending. Due to the low sheet resistance, high optical transmittance, better crystallinity, better adhesion, and outstanding flexibility of the ion-plated IWO films, the flexible OLEDs and QDLEDs with the IWO electrodes showed better performances than flexible OLEDs and QDLEDs with sputtered flexible ITO anodes. This indicates that in-line arc plasma ion plating is a promising large area coating technique to realize room temperature processed high-quality FTCEs for flexible OLEDs and QDLEDs.

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“…Furthermore, ITO electrodes are usually fabricated through an expensive vacuum process, such as evaporation or sputtering, and indium is very costly because reserves of the element are limited [32][33][34]. To address the problems of typical ITO electrodes, various substitutions, such as conductive polymers [35][36][37], carbon nanotubes [38,39], graphene [40,41], and metal nanowires [42,43], have been extensively investigated. Among several candidates, Ag nanowires (AgNWs) with a diameter of less than 100 nm and a length of several µm are thought to be promising materials to replace ITO films for fabrication of FTCE devices.…”

Section: Introductionmentioning

confidence: 99%

Highly flexible Ag nanowire network covered by a graphene oxide nanosheet for high-performance flexible electronics and anti-bacterial applications

Sim

Kim

2021

Science and Technology of Advanced Materials

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Highly flexible Ag nanowire network covered by a graphene oxide nanosheet for high-performance flexible electronics and anti-bacterial applicationsWe investigated a flexible and transparent conductive electrode (FTCE) based on Ag nanowires (AgNWs) and a graphene oxide (GO) nanosheet and fabricated through a simple and cost-effective spray coating method. The AgNWs/GO hybrid FTCE was optimized by adjusting the nozzle-to-substrate distance, spray speed, compressor pressure, and volume of the GO solution. The optimal AgNWs/GO hybrid FTCE has a high transmittance of 88 % at a wavelength of 550 nm and a low sheet resistance of 20 Ohm/square. We demonstrate the presence of the GO nanosheet on the AgNWs through Raman spectroscopy. Using secondary electron microscopy and atomic force microscopy, we confirmed that the nanosheet acted as a conducting bridge between AgNWs and improved the surface morphology and roughness of the electrode.Effective coverage by the GO sheet improved the conductivity of the AgNWs electrode Effective coverage of the GO sheet improved conductivity of the AgNWs electrode with minimum degradation of optical and mechanical properties. Flexible thin film heater (TFH) and electroluminescent (EL) devices fabricated on AgNWs/GO hybrid FTCEs showed better performance than devices on bare AgNWs electrodes due to lower sheet resistance and uniform conductivity. In addition, an AgNWs/GO electrode layer on a facial mask acts as a self-heating and antibacterial coating. A facial mask with an AgNWs/GO electrode showed a bacteriostatic reduction rate of 99.7 against Staphylococcus aureus and Klebsiella pneumonia.

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Buffer and anode-integrated WO3-doped In2O3 electrodes for PEDOT:PSS-free organic photovoltaics

Cited by 18 publications

References 27 publications

Role of dopants as a carrier suppressor and strong oxygen binder in amorphous indium-oxide-based field effect transistor

Role of dopants as a carrier suppressor and strong oxygen binder in amorphous indium-oxide-based field effect transistor

Room temperature processed high mobility W-doped In2O3 electrodes coated via in-line arc plasma ion plating for flexible OLEDs and quantum dots LEDs

Highly flexible Ag nanowire network covered by a graphene oxide nanosheet for high-performance flexible electronics and anti-bacterial applications

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