Tungsten dichalcogenide WS_2xSe_2−2x films via single source precursor low-pressure CVD and their (thermo-)electric properties

Abstract

Semiconducting transition metal dichalcogenides have gained increased interest as potential alternatives to graphene due to their tunable electronic bandgaps. In this study, we present the deposition of stoichiometric WS2xSe2-2x (0...

Aerosol-assisted chemical vapor deposition of 2H-WS2 from single-source tungsten dithiolene precursors

“…This morphology is common for thin films of TMDs grown via CVD. 34,39,61 For films grown at the same temperature with the different precursors: 1 , 2 , and 3 , the size of the platelets increased with the number of dithiolene ligands present (Fig. 8).…”

“…37,38 WSCl 4 (S n Bu 2 ) used in LPCVD experiments yielded 2H-WS 2 thin films on silicon substrates from 624–650 °C. 39 [(WSCl 4 ) 2 ( i PrS(CH 2 ) 2 S i Pr)] was used in low pressure CVD trials to deposit 2H-WS 2 onto silica substrates at 700 °C. 40 CVD at 600 °C using [W(SEtN(Me)EtS) 2 ] resulted in 2H-WS 2 thin films deposited onto silicon substrates.…”

Single-Source Precursors for the Chemical Vapor Deposition of Group 4–6 Transition Metal Dichalcogenides

“…Binary and ternary WS 2x Se 2−2x thin films were deposited using the precursors WECl 4 (E′ n Bu 2 ) (28: E, E′ = S; 29: E = S, E′ = Se; 30: E, E′ = Se; 31: E = Se, E′ = S) in low-pressure CVD experiments. 86,87 The precursors were synthesized by The combination of a terminal sulfido ligand with thioether ligands was also utilized in the precursors [NbSCl 3 (S n Bu 2 )] 2 (32) and NbSCl 3 ( n BuS(CH 2 ) 3 S n Bu) (33) to deposit thin films of 3R-NbS 2 on glass substrates via low-pressure CVD at 0.05 mmHg and 700 °C. 88 Complex 32 was synthesized by reaction of NbCl 5 and S n Bu 2 , followed by the addition of S(SiMe 3 ) 2 .…”

“…Binary and ternary WS 2 x Se 2–2 x thin films were deposited using the precursors WECl 4 (E′ n Bu 2 ) ( 28 : E, E′ = S; 29 : E = S, E′ = Se; 30 : E, E′ = Se; 31 : E = Se, E′ = S) in low-pressure CVD experiments. , The precursors were synthesized by reacting either WSCl 4 or WSeCl 4 with a neutral chalcogenoether (S n Bu 2 or Se n Bu 2 ) in DCM. The precursors containing terminal sulfido ligands were found to be more stable than those containing terminal selenido ligands.…”

“…(b) Raman spectra of the thin films deposited from (A) WSCl 4 (S n Bu 2 ) ( 28 ), (B) WSCl 4 (Se n Bu 2 ) ( 29 ), (C) WSeCl 4 (S n Bu 2 ) ( 31 ), and (D) WSeCl 4 (Se n Bu 2 ) ( 30 ). Reprinted with permission under a Creative Commons CC-BY 3.0 license from ref . Copyright 2023 Royal Society of Chemistry.…”