Single-Source Precursors for the Chemical Vapor Deposition of Group 4–6 Transition Metal Dichalcogenides

Abstract

Chemical vapor deposition (CVD) is a widely used method for the synthesis of high-quality thin films of inorganic materials. Transition metal dichalcogenides (TMDs) have received a great deal of interest due to their electronic and catalytic properties. To enable the widespread use of CVD in the synthesis of TMDs for practical applications, the choice of precursor(s) is critical. Single-source precursors are appealing for CVD applications, as they can influence the properties of the deposited film, potentially simplify CVD processes, and reduce the use of hazardous coreactants such as H 2 S. In this Perspective, we discuss examples of single-source precursors that have been demonstrated to deposit group 4−6 sulfur or selenium TMDs via CVD, along with aspects of precursor design, decomposition mechanisms, and properties of the resulting materials.

Aerosol-assisted chemical vapor deposition of 2H-WS2 from single-source tungsten dithiolene precursors

“…There are only a few examples of reported SSPs for the CVD of WS 2 . 36 WS(S 2 )(S 2 CNEt 2 ) 2 dissolved in toluene was used to deposit 2H-WS 2 from 350–500 °C via AACVD. 37,38 WSCl 4 (S n Bu 2 ) used in LPCVD experiments yielded 2H-WS 2 thin films on silicon substrates from 624–650 °C.…”