Tunable type-II band alignment and electronic structure of C3N4/MoSi2N4 heterostructure: Interlayer coupling and electri

Rashba-type spin splitting and transport properties of novel Janus XWGeN2 (X = O, S, Se, Te) monolayers

“…26,27 Recently, 2D TMN MoSi 2 N 4 and WSi 2 N 4 have been experimentally fabricated 28 and quickly gained intense interest in the scientific community. 29–31 MoSi 2 N 4 (and also WSi 2 N 4 ) has a seven atomic layer structure with a MoN 2 (WN 2 ) monolayer sandwiched between two Si 2 N 2 monolayers. Here, MoN 2 has the same structure as MoS 2 while Si 2 N 2 has the InS-type of structure.…”

Controllable Schottky barriers and contact types of BN intercalation layers in graphene/MoSi2As4vdW heterostructuresviaapplying an external electrical field

“…33–36 Cui et al have found that p-doping or n-doping can be effectively modulated with different organic molecules doped in the MoSi 2 N 4 monolayer. 37 What's more, in the recently proposed MoGe 2 N 4 /BP, 38 BP/MoSi 2 P 4 , 39 MoSi 2 N 4 /C 3 N 4 40 and C 2 N/MoSi 2 N 4 41 heterostructures, the type-II band alignment with direct band gaps can effectively promote the spatial separation of electrons and holes, and meanwhile the strong optical absorption intensity and high carrier mobility make the heterostructures promising candidates for high-performance photovoltaic 38–40 and photocatalytic applications. 41 Cao et al have found that the MoSi 2 N 4 /NbS 2 vdW heterostructure exhibits an ultralow Schottky barrier height (SBH), while the SBH of MoSi 2 N 4 /graphene can be modulated via the interlayer distance or external electric field, which is beneficial for nanoelectronics applications.…”

Strain engineering of lateral heterostructures based on group-V enes (As, Sb, Bi) for infrared optoelectronic applications calculated by first principles

“…14,35–37 Therefore, an investigation of the effect of strain on optoelectronic properties, especially for 2D materials, is important, either from theoretical or experimental aspects. 38…”

“…Among the numerous monolayer 2D materials, a lateral monolayer heterostructure has been predicted and realized in recent years. 38–42 A lateral heterostructure (LHS) can have different atom configuration at the interface, which induces neoteric properties. In this work, we constructed Group-V enes (As, Sb, Bi) monolayer LHSs of As/Sb and Sb/Bi.…”