Controllable Schottky barriers and contact types of BN intercalation layers in graphene/MoSi₂As₄vdW heterostructuresviaapplying an external electrical field

Abstract

Graphene-based van der Waals (vdW) heterostructures have opened unprecedented opportunities for various device applications due to their rich functionalities and novel physical properties. Motivated by the successful synthesis of MoSi2N4...

The electronic structure and interfacial contact with metallic borophene of monolayer ScSX (X = I, Br, and Cl)

“…This is because the tunability of the Schottky barrier leads to the change of interface resistance, 28–31 which will make the nanodevice easier to capture the electrical signals with high sensitivity. 72,73…”

Graphene/M2OS (M = Ga, In) van der Waals Heterostructure with Robust Ohmic Contact

“…By selection of different 2D materials and specific stacking methods, the unique properties of each can be organically combined. There have been many theoretical and experimental reports on 2D layered vdWHs, − especially the graphene-based vertical vdWH, such as graphene/phosphorene . The heterostructures made from Janus 2D materials and graphene have also been extensively studied. − These heterostructures show very good application prospects, but they all have a high Schottky barrier, although this barrier can be adjusted by adjusting the layer spacing and external electric field.…”

Combined Machine Learning and High-Throughput Calculations Predict Heyd–Scuseria–Ernzerhof Band Gap of 2D Materials and Potential MoSi2N4 Heterostructures

“…Remarkably, the transition from an n-type Schottky contact to a p-type counterpart can be attained at 0.2 V/Å. 15 Nguyen et al delved into the atomic and electronic configurations of the C 3 N 4 /MoSi 2 N 4 van der Waals heterostructures, unveiling their malleable electronic framework through interlayer coupling and an external perpendicular electronic field. Remarkably, the electronic architecture and band alignment types exhibit a flexible spectrum, transitioning adeptly between type-I and type-II under the influence of an external electric field, alterations in interlayer distance, and the imposition of in-plane strain.…”

“…The interface establishes an n-type Schottky contact, boasting a slender barrier of 0.12 eV, showcasing sensitivity to external electric fields. Remarkably, the transition from an n-type Schottky contact to a p-type counterpart can be attained at 0.2 V/Å . Nguyen et al delved into the atomic and electronic configurations of the C 3 N 4 /MoSi 2 N 4 van der Waals heterostructures, unveiling their malleable electronic framework through interlayer coupling and an external perpendicular electronic field.…”