Tunable schottky barrier in blue phosphorus–graphene heterojunction with normal strain

Zhu, Jiaduo; Zhang, Jincheng; Hao, Yue

doi:10.7567/jjap.55.080306

Cited by 28 publications

(11 citation statements)

References 44 publications

(51 reference statements)

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“…Most recently, there has been rapidly growing interest in atomic-scale vertical van der Waals (vdW) heterostructures made from a combination of G and other 2D semiconducting materials, such as G/MoS 2 37 – 40 , G/phosphorene 41 – 45 , G/arsenene 46 , 47 , G/blue phosphorene 48 , 49 , and G/g-GaN 50 . Such heterostructures preserve the unique Dirac cone structure of G and provide a higher electronic quality for G-based nanodevices.…”

Section: Introductionmentioning

confidence: 99%

Tunable Schottky barrier in graphene/graphene-like germanium carbide van der Waals heterostructure

Wang

Chou

Ren

et al. 2019

Sci Rep

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The structural and electronic properties of van der Waals (vdW) heterostructrue constructed by graphene and graphene-like germanium carbide were investigated by computations based on density functional theory with vdW correction. The results showed that the Dirac cone in graphene can be quite well-preserved in the vdW heterostructure. The graphene/graphene-like germanium carbide interface forms a p-type Schottky contact. The p-type Schottky barrier height decreases as the interlayer distance decreases and finally the contact transforms into a p-type Ohmic contact, suggesting that the Schottky barrier can be effectively tuned by changing the interlayer distance in the vdW heterostructure. In addition, it is also possible to modulate the Schottky barrier in the graphene/graphene-like germanium carbide vdW heterostructure by applying a perpendicular electric field. In particular, the positive electric field induces a p-type Ohmic contact, while the negative electric field results in the transition from a p-type to an n-type Schottky contact. Our results demonstrate that controlling the interlayer distance and applying a perpendicular electric field are two promising methods for tuning the electronic properties of the graphene/graphene-like germanium carbide vdW heterostructure, and they can yield dynamic switching among p-type Ohmic contact, p-type Schottky contact, and n-type Schottky contact in a single graphene-based nanoelectronics device.

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Section: Introductionmentioning

confidence: 99%

Tunable Schottky barrier in graphene/graphene-like germanium carbide van der Waals heterostructure

Wang

Chou

Ren

et al. 2019

Sci Rep

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“…[12][13][14][15][16][17] For example, monolayer graphene remains a zero-gap material under an external electric field but a finite band gap appears for bilayer and multilayer graphene. 18,19 Because of the impressive progress in graphene research, enormous scientists have focused on exploring other 2D materials.…”

Section: Introductionmentioning

confidence: 99%

Tunable band gap of MoS2-SiC van der Waals heterostructures under normal strain and an external electric field

Luo

2017

AIP Advances

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The structure and electronic properties of the MoS2/SiC van der Waals (vdW) heterostructures under an influence of normal strain and an external electric field have been investigated by the first-principles method. Our results reveal that the compressive strain has much influence on the band gap of the vdW heterostructures and the band gap monotonically increases from 0.955 to 1.343 eV. The results also imply that electrons are likely to transfer from MoS2 to SiC monolayer due to the deeper potential of SiC monolayer. Interestingly, by applying a vertical external electric field, the results present a parabola-like relationship between the band gap and the strength. As the E-field changes from -0.55 to +0.18 V/Å, the band gap first increases from zero to a maximum of about 1.76 eV and then decreases to zero. The significant variations of band gap are owing to different states of Mo, S, Si, and C atoms in conduction band and valence band. The predicted electric field tunable band gap of the MoS2/SiC vdW heterostructures is very promising for its potential use in nanodevices.

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“…Because of the difficulties in conducting the above-mentioned experimental studies, theoretical techniques such as first principle calculations, which are based on the laws of quantum mechanics and calculate the mechanical, electronic, optical, and magnetic properties of materials using only fundamental physical constants, [128] and molecular dynamics (MD) simulations, which study the equilibrium and transport properties of a classical many-body system by solving Newton's equations of motion based on empirical data, [129] are frequently adopted to investigate the influence of external strain on the interlayer coupling of various vdW heterostructures. [130][131][132][133][134][135][136][137][138][139][140][141][142] Besides the good controllability, theoretical methods could also uncover the underlying modulation mechanisms. For example, by using time-domain ab initio MD simulation, Tian et al [143] demonstrated that the electron-transfer dynamics in MoS 2 /WS 2 vdW heterostructure could be efficiently tuned by external strain, due to the reduction of energy in the K valley, which would block the original K-to-T valley electron-transfer route.…”

Section: External Strain/pressure Fieldmentioning

confidence: 99%

Recent Advances on Tuning the Interlayer Coupling and Properties in van der Waals Heterostructures

Chen

Yang

et al. 2022

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Abstract2D van der Waals (vdW) heterostructures are receiving increasing research attention due to the theoretically amazing properties and unprecedented application potential. However, the as‐synthesized heterostructures are generally underperforming due to the weak interlayer coupling, which inspires the researchers to find ways to modulate the interlayer coupling and properties, realizing the tailored performance for actual applications. There have been a lot of publications regarding the controllable regulation of the structures and properties of 2D vdW heterostructures in the past few years, while a review work summarizing the current advances is not yet available, though it is significant. This paper conducts a state‐of‐the‐art review regarding the current research progress of performance modulation of vdW heterostructures by different techniques. First, the general synthesis methods of vdW heterostructures are summarized. Then, different performance modulation techniques, that is, mechanical‐based, external fields‐assisted, and particle beam irradiation‐based methods, are discussed and compared in detail. Some of the newly proposed concepts are described. Thereafter, applications of vdW heterostructures with tailored properties are reviewed for the application prospects of the topic around this area. Moreover, the future research challenges and prospects are discussed, aiming at triggering more research interest and device applications around this topic.

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Tunable schottky barrier in blue phosphorus–graphene heterojunction with normal strain

Cited by 28 publications

References 44 publications

Tunable Schottky barrier in graphene/graphene-like germanium carbide van der Waals heterostructure

Tunable Schottky barrier in graphene/graphene-like germanium carbide van der Waals heterostructure

Tunable band gap of MoS2-SiC van der Waals heterostructures under normal strain and an external electric field

Recent Advances on Tuning the Interlayer Coupling and Properties in van der Waals Heterostructures

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