Tunable Ohmic, p-Type Quasi-Ohmic, and n-Type Schottky Contacts of Monolayer SnSe with Metals

He, Cheng; Cheng, Ming; Li, Tongtong; Zhang, W. X.

doi:10.1021/acsanm.9b00276

Cited by 25 publications

(25 citation statements)

References 50 publications

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“…[206] In a similar manner, in-plane anisotropic layered 2D MMCs have recently been investigated as potentially promising materials in photovoltaics. [38,41,42,109,172,[207][208][209][210][211][212] Dai and co-workers [41] have designed and investigated a new photovoltaic system based on novel 2D MMCs. In particular, the photoresponse and the photovoltaic performance of GeS, GeSe, SnS, and SnSe monolayers were evaluated by means of theoretical quantum transport simulations.…”

Section: Energy Conversionmentioning

confidence: 99%

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Recent Advances in 2D Metal Monochalcogenides

Sarkar

Stratakis

2020

Advanced Science

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The family of emerging low‐symmetry and structural in‐plane anisotropic two‐dimensional (2D) materials has been expanding rapidly in recent years. As an important emerging anisotropic 2D material, the black phosphorene analog group IV A –VI metal monochalcogenides (MMCs) have been surged recently due to their distinctive crystalline symmetries, exotic in‐plane anisotropic electronic and optical response, earth abundance, and environmentally friendly characteristics. In this article, the recent research advancements in the field of anisotropic 2D MMCs are reviewed. At first, the unique wavy crystal structures together with the optical and electronic properties of such materials are discussed. The Review continues with the various methods adopted for the synthesis of layered MMCs including micromechanical and liquid phase exfoliation as well as physical vapor deposition. The last part of the article focuses on the application of the structural anisotropic response of 2D MMCs in field effect transistors, photovoltaic cells nonlinear optics, and valleytronic devices. Besides presenting the significant research in the field of this emerging class of 2D materials, this Review also delineates the existing limitations and discusses emerging possibilities and future prospects.

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Section: Energy Conversionmentioning

confidence: 99%

“…[ 206 ] In a similar manner, in‐plane anisotropic layered 2D MMCs have recently been investigated as potentially promising materials in photovoltaics. [ 38,41,42,109,172,207–212 ]…”

Section: Applications: Theory and Experiments Prospectmentioning

confidence: 99%

Recent Advances in 2D Metal Monochalcogenides

Sarkar

Stratakis

2020

Advanced Science

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“…In this study, we annealed the SnSe thin films at relatively low temperatures of around 480 K and found significant modification of physical properties. In practical applications, SnSe would be utilized at temperatures higher than 480 K because the thermoelectric performance of SnSe is optimized in the high temperature region above 700 K 17 – 19 , 22 , 45 , which is far above the annealing temperature adopted in this study. Moreover, the size of the SnSe nanostructures composing the thin film, as shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

Oxidation-induced thermopower inversion in nanocrystalline SnSe thin film

Shimizu

Miwa²,

Kobayashi

et al. 2021

Sci Rep

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Given the growing demand for environmentally friendly energy sources, thermoelectric energy conversion has attracted increased interest as a promising CO2-free technology. SnSe single crystals have attracted attention as a next generation thermoelectric material due to outstanding thermoelectric properties arising from ultralow thermal conductivity. For practical applications, on the other hand, polycrystalline SnSe should be also focused because the production cost and the flexibility for applications are important factors, which requires the systematic investigation of the stability of thermoelectric performance under a pseudo operating environment. Here, we report that the physical properties of SnSe crystals with nano to submicron scale are drastically modified by atmospheric annealing. We measured the Seebeck effect while changing the annealing time and found that the large positive thermopower, + 757 μV K−1, was completely suppressed by annealing for only a few minutes and was eventually inverted to be the large negative value, − 427 μV K−1. This result would further accelerate intensive studies on SnSe nanostructures, especially focusing on the realistic device structures and sealing technologies for energy harvesting applications.

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“…For 2D/3D heterostructure composed of bulk metals (e.g., Sc, Ti, Ag, Cu, Au, Pd, Pt, Cr, Ni, etc.) in contact with TMDC monolayers of WS 2 , 178 WSe 2 , 192 WTe 2 , 193 MoS 2 , 175,194 MoSe 2 , 195 and with black phosphorene, 196 and black‐phosphorene‐analogues such as SnS 197 and SnSe 198 are studied using DFT and quantum transport simulations. Rich contact phenomena, such as the formation of n ‐type and p ‐type Schottky contacts, ohmic contacts, and the strong metalization of the 2D semiconductors by contacting metals are identified in these materials.…”

Section: First‐principle Density Functional Theory Simulation Of Electrical Contacts To 2d Materialsmentioning

confidence: 99%

“…Beyond TMDCs, black phosphorene 196 and black‐phosphorene‐analogues, such as SnS 197 and SnSe, 198 are also extensively studied. For this class materials, strong metalization and substantial Fermi level pinning effect are identified.…”

Section: First‐principle Density Functional Theory Simulation Of Electrical Contacts To 2d Materialsmentioning

confidence: 99%

Physics of electron emission and injection in two‐dimensional materials: Theory and simulation

Ang

Cao

Ang

2021

InfoMat

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Electrically contacting two‐dimensional (2D) materials is an inevitable process in the fabrication of devices for both the study of fundamental nanoscale charge transport physics and the design of high‐performance novel electronic and optoelectronic devices. The physics of electrical contact formation and interfacial charge injection critically underlies the performance, energy‐efficiency and the functionality of 2D‐material‐based devices, thus representing one of the key factors in determining whether 2D materials can be successfully implemented as a new material basis for the development of next‐generation beyond‐silicon solid‐state device technology. In this review, the recent developments in the theory and the computational simulation of electron emission, interfacial charge injection and electrical contact formation in 2D material interfaces, heterostructures, and devices are reviewed. Focusing on thermionic charge injection phenomena which are omnipresent in 2D‐materials‐based metal/semiconductor Schottky contacts, we summarize various transport models and scaling laws recently developed for 2D materials. Recent progress on the first‐principle density functional theory simulation of 2D‐material‐based electrical contacts are also reviewed. This review aims to provide a crystalized summary on the physics of charge injection in the 2D Flatlands for bridging the theoretical and the experimental research communities of 2D material device physics and technology.

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Tunable Ohmic, p-Type Quasi-Ohmic, and n-Type Schottky Contacts of Monolayer SnSe with Metals

Cited by 25 publications

References 50 publications

Recent Advances in 2D Metal Monochalcogenides

Recent Advances in 2D Metal Monochalcogenides

Oxidation-induced thermopower inversion in nanocrystalline SnSe thin film

Physics of electron emission and injection in two‐dimensional materials: Theory and simulation

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